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ACT-SF41632N-39P5I 参数 Datasheet PDF下载

ACT-SF41632N-39P5I图片预览
型号: ACT-SF41632N-39P5I
PDF下载: 下载PDF文件 查看货源
内容描述: ACT- SF41632高速128Kx32 SRAM /闪存512Kx32多芯片模块 [ACT-SF41632 High Speed 128Kx32 SRAM / 512Kx32 Flash Multichip Module]
分类和应用: 闪存静态存储器
文件页数/大小: 11 页 / 186 K
品牌: AEROFLEX [ AEROFLEX CIRCUIT TECHNOLOGY ]
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AC Waveforms for Flash Memory Read Operations
t
RC
Addresses
Addresses Stable
t
ACC
FCE
t
DF
OE
t
OE
FWE
t
CE
Outputs
High Z
t
OH
Output Valid
High Z
Write/Erase/Program
Operation for Flash Memory, FWE Controlled
Data Polling
Addresses
5555H
t
WC
FCE
t
GHWL
OE
t
WP
FWE
t
CE
t
DH
AOH
Data
t
DS
PD
D7
D
OUT
t
OH
t
OE
t
WPH
t
DF
t
WHWH
1
t
AS
PA
t
AH
PA
t
RC
5.0V
t
CE
Notes:
1. PA is the address of the memory location to be programmed.
2. PD is the data to be programmed at byte address.
3. D7 is the 0utput of the complement of the data written to the deviced.
4. Dout is the output of the data written to the device.
5. Figure indicates last two bus cycles of four bus cycle sequence.
Aeroflex Circuit Technology
6
SCD3851 REV A 5/21/98
Plainview NY (516) 694-6700