ACT-SF512K32 High Speed
512Kx32 SRAM / 512Kx32 Flash
Multichip Module
CIRCUIT TECHNOLOGY
FEATURES
4 – 512K x 8 SRAMs & 4 – 512K x 8 Flash Die in
One MCM
s
Access Times of 25ns, 35ns (SRAM) and
60ns, 70ns, 90ns (Flash)
s
Organized as 512K x 32 of SRAM and 512K x 32
of Flash Memory with Common Data Bus
s
Low Power CMOS
s
Input and Output TTL Compatible Design
s
MIL-PRF-38534 Compliant MCMs Available
s
Decoupling Capacitors and Multiple Grounds for
Low Noise
s
Commercial, Industrial and Military Temperature
Ranges
s
Industry Standard Pinouts
s
TTL Compatible Inputs and Outputs
s
Packaging – Hermetic Ceramic
q
66–Lead, PGA-Type, 1.385"SQ x 0.245"max,
Aeroflex code# "P1,P5 with/without shoulders)"
q
68–Lead, Dual-Cavity CQFP(F2), 0.88"SQ x
.20"max (.18 max thickness available, contact
factory for details)
(Drops into the 68 Lead
JEDEC .99"SQ CQFJ footprint)
s
s
www.aeroflex.com
FLASH MEMORY FEATURES
Sector Architecture (Each Die)
q
8 Equal Sectors of 64K bytes each
q
Any
combination of sectors can be erased with one
command sequence
+5V Programing, +5V Supply
s
Embedded Erase and Program Algorithms
s
Hardware and Software Write Protection
s
Page Program Operation and Internal Program
Control Time.
s
10,000 Erase/Program Cycles
s
A E
RO
F
LE
X
LA
B
S
I
NC
.
C
ISO
9001
E
RT
I
F
I
E
D
Block Diagram – PGA Type Package(P1 & P5) & CQFP(F2)
FWE
1
SWE
1
OE
A
0
–A
18
SCE
FCS
FWE
2
SWE
2
FWE
3
SWE
3
FWE
4
SWE
4
PIN DESCRIPTION
I/O
0-31
A
0–18
FWE
1-4
Data I/O
Address Inputs
Flash Write Enables
SWE
1-4
SRAM Write Enables
512K
X
8 F
LASH
512K
X
8 SRAM
512K
X
8 F
LASH
512K
X
8 SRAM
512K
X
8 F
LASH
512K
X
8 SRAM
512K
X
8 F
LASH
512K
X
8 SRAM
FCE
SCE
OE
NC
V
CC
GND
Flash Chip Enable
SRAM Chip Enable
Output Enable
Not Connected
Power Supply
Ground
I/O
0-7
I/O
8-15
I/O
16-23
I/O
24-31
eroflex Circuit Technology - Advanced Multichip Modules © SCD3852 REV A 5/20/98