RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
DD
T
C
V
IN
PARAMETER
Positive supply voltage
Case temperature range
DC input voltage
LIMITS
4.5 to 5.5
-55 to +125
0 to V
DD
UNITS
V
°C
V
DC ELECTRICAL CHARACTERISTICS (Pre/Post-Radiation)*
(V
DD
= 5.0V
±
10%; -55°C < T
C
< +125°C)
SYMBOL
V
IH
V
IL
V
OL1
V
OL2
V
OH1
V
OH2
C
IN 1
C
IO 1, 4
I
IN
I
OZ
PARAMETER
High-level input voltage
Low-level input voltage
Low-level output voltage
Low-level output voltage
High-level output voltage
High-level output voltage
Input capacitance
(TTL)
(TTL)
I
OL
= 4.0mA, V
DD
= 4.5V (TTL)
I
OL
= 200µA, V
DD
= 4.5V (CMOS)
I
OH
= -200µA, V
DD
= 4.5V (CMOS)
I
OH
= -2.0mA, V
DD
= 4.5V (TTL)
ƒ
= 1MHz, V
DD
= 5.0V
V
IN
= 0V
ƒ
= 1MHz, V
DD
= 5.0V
V
OUT
= 0V
Input leakage current
Three-state output leakage
current
V
IN
= 0V to V
DD
V
O
= 0V to V
DD
V
DD
= 5.5V
OE = 5.5V
V
DD
= 5.5V, V
O
= V
DD
V
DD
= 5.5V, V
O
= 0V
TTL inputs levels (I
OUT
= 0), V
IL
=
0.2V
V
DD
, PE = 5.5V
CMOS input levels V
IL
= V
SS
+0.25V
CE = V
DD
- 0.25 V
IH
= V
DD
- 0.25V
-5
-10
5
10
µA
µA
V
DD
-0.1
2.4
15
CONDITION
MINIMUM
2.4
0.8
0.4
V
SS
+ 0.10
MAXIMUM
UNIT
V
V
V
V
V
V
pF
Bidirectional I/O capacitance
15
pF
I
OS 2,3
I
DD1
(OP)
5
Short-circuit output current
90
-90
mA
mA
Supply current operating
@25.0MHz (40ns product)
@22.2MHz (45ns product)
Supply current standby
125
117
2
mA
mA
mA
I
DD2
(SB)
post-rad
Notes:
* Post-radiation performance guaranteed at 25°C per MIL-STD-883 Method 1019 at 1E6 rad(Si).
1. Measured only for initial qualification, and after process or design changes that could affect input/output capacitance.
2. Supplied as a design limit but not guaranteed or tested.
3. Not more than one output may be shorted at a time for maximum duration of one second.
4. Functional test.
5. Derates at 3.0mA/MHz.
3
AEROFLEX [ AEROFLEX CIRCUIT TECHNOLOGY ]
