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UT7C138C45GPC 参数 Datasheet PDF下载

UT7C138C45GPC图片预览
型号: UT7C138C45GPC
PDF下载: 下载PDF文件 查看货源
内容描述: 4Kx8 / 9抗辐射双口静态RAM与忙标志 [4Kx8/9 Radiation-Hardened Dual-Port Static RAM with Busy Flag]
分类和应用: 内存集成电路静态存储器
文件页数/大小: 21 页 / 360 K
品牌: AEROFLEX [ AEROFLEX CIRCUIT TECHNOLOGY ]
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ABSOLUTE MAXIMUM RATINGS  
(Referenced to VSS  
)
SYMBOL  
PARAMETER  
DC supply voltage  
LIMITS  
VDD  
-0.5 to 7.0V  
VI/O  
TSTG  
PD  
Voltage on any pin  
-0.5 to (VDD + 0.3)V  
-65 to +150°C  
2.0W  
Storage temperature  
Maximum power dissipation  
Maximum junction temperature2  
TJ  
+150°C  
Thermal resistance, junction-to-case3  
DC input current  
QJC  
3.3°C/W  
II  
±10 mA  
Notes:  
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, and functional operation of the device  
at these or any other conditions beyond limits indicated in the operational sections of this specification is not recommended. Exposure to absolute maximum rating  
conditions for extended periods may affect device reliability.  
2. Maximum junction temperature may be increased to +175°C during burn-in and steady-static life.  
3. Test per MIL-STD-883, Method 1012, infinite heat sink.  
RECOMMENDED OPERATING CONDITIONS  
SYMBOL  
PARAMETER  
Positive supply voltage  
LIMITS  
VDD  
4.5 to 5.5V  
TC  
Case temperature range  
DC input voltage  
-55 to +125°C  
VIN  
0V to VDD  
5