DC ELECTRICAL CHARACTERISTICS (Pre/Post-Radiation)*
(V
DD
= 5.0V
±
10%; -55°C < T
C
< +125°C)
SYMBOL
V
IH
V
IL
V
OL
V
OL
V
OH
V
OH
C
IN 1
C
IO 1
I
IN
I
OZ
PARAMETER
High-level input voltage
Low-level input voltage
Low-level output voltage
Low-level output voltage
High-level output voltage
High-level output voltage
Input capacitance
Bidirectional I/O capacitance
Input leakage current
Three-state output leakage current
(CMOS)
(CMOS)
I
OL
= 8mA, V
DD
= 4.5V (TTL)
I
OL
= 200µA, V
DD
= 4.5V (CMOS)
I
OH
= -4mA, V
DD
= 4.5V (TTL)
I
OH
= -200µA, V
DD
= 4.5V (CMOS)
ƒ
= 1MHz @ 0V
ƒ
= 1MHz @ 0V
V
IN
= V
DD
and V
SS
V
O
= V
DD
and V
SS
V
DD
= 5.5V
G = 5.5V
I
OS 2,3
Short-circuit output current
V
DD
= 5.5V, V
O
= V
DD
V
DD
= 5.5V, V
O
= 0V
I
DD
(OP)
4,5
Supply current operating (both ports)
@ 22.2MHz
I
DD
(OP)
4,6
Supply current operating (single port)
@ 22.2 MHz
I
DD
(OP)
4,5
Supply current operating (both ports)
@ 18.2MHz
I
DD
(OP)
4,6
Supply current operating (single port)
@ 18.2 MHz
I
DD
(SB)
4
Supply current standby
CMOS inputs (I
OUT
= 0)
V
DD
= 5.5V
CMOS inputs (I
OUT
= 0)
V
DD
= 5.5V
CMOS inputs (I
OUT
= 0)
V
DD
= 5.5V
CMOS inputs (I
OUT
= 0)
V
DD
= 5.5V
CMOS inputs (I
OUT
= 0)
CE = V
DD
- 0.5, V
DD
= 5.5V
Notes:
* Post-radiation performance guaranteed at 25°C per MIL-STD-883 Method 1019.
1. Measured only for initial qualification and after process or design changes that could affect input/output capacitance.
2. Supplied as a design limit but not guaranteed or tested.
3. Not more than one output may be shorted at a time for maximum duration of one second.
4. V
IH
= 5.5V, V
IL
= 0V.
5. I
DD
(OP) derates at 6.4mA/MHz.
6. I
DD
(OP) derates at 3.4mA/MHz.
CONDITION
MIN
0.7V
DD
MAX
UNIT
V
0.3V
DD
0.4
0.05
2.4
4.45
25
25
-10
-10
10
10
V
V
V
V
V
pF
pF
µA
µA
90
-90
300
mA
mA
mA
150
mA
275
mA
138
mA
1
mA
6
AEROFLEX [ AEROFLEX CIRCUIT TECHNOLOGY ]
