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UT7C139C55GCX 参数 Datasheet PDF下载

UT7C139C55GCX图片预览
型号: UT7C139C55GCX
PDF下载: 下载PDF文件 查看货源
内容描述: 4Kx8 / 9抗辐射双口静态RAM与忙标志 [4Kx8/9 Radiation-Hardened Dual-Port Static RAM with Busy Flag]
分类和应用: 内存集成电路静态存储器
文件页数/大小: 21 页 / 360 K
品牌: AEROFLEX [ AEROFLEX CIRCUIT TECHNOLOGY ]
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AC CHARACTERISTICS WRITE CYCLE
1
(V
DD
= 5.0V±10%)
SYMBOL
PARAMETER
7C138 - 45
7C139 - 45
MIN
MAX
7C138 - 55
7C139 - 55
MIN
MAX
UNIT
t
WC
t
SCE
t
AW
t
HA
t
SA
t
PWE
t
SD
t
HD
t
HZWE
t
LZWE
t
WDD
t
DDD
t
WHWL
Write cycle time
CE LOW to write end
Address set-up to write end
Address hold from write end
Address set-up to write start
Write pulse width
Data set-up to write end
Data hold from write end
R/W LOW to high Z
R/W HIGH to low Z
Write pulse to data delay
Write data valid to read data valid
Write disable time
45
40
40
0
0
40
40
0
20
0
95
95
5
55
50
50
0
0
50
50
0
20
0
105
105
5
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes:
1. For information on part-to-part delay through DPRAM cells from writing port to reading port, refer to Read Timing with Port-to-Port Delay waveform (see figure 3c).
9