3
DATA RETENTION CHARACTERISTICS (Pre-Radiation) (V
= V
(min), 1 Sec DR Pulse)
DD2
DD2
SYMBOL
PARAMETER
for data retention
DD1
MINIMUM MAXIMUM UNIT
V
V
1.0
1.0
--
--
V
DR
1
Data retention current
-55°C
25°C
125°C
600
600
30
µA
µA
mA
I
DDR
Device Type 1
1
Data retention current
-40°C
25°
125°C
--
600
600
30
µA
µA
mA
I
DDR
Device Type 2
1,2
Chip deselect to data retention time
Operation recovery time
0
0
ns
ns
t
EFR
1,2
t
t
AVAV
AVAV
t
R
Notes:
* Post-radiation performance guaranteed at 25°C per MIL-STD-883 Method 1019.
1. EN = VDD2 all other inputs = VDD2 or VSS
2. VDD2 = 0 volts to VDD2 (max)
DATA RETENTION MODE
> 1.0V
1.7V
1.7V
V
DR
V
DD1
t
t
R
EFR
VIN >0.7VDD2 CMOS
V
SS
EN
V
DD2
VIN <0.3VDD2 CMOS
Figure 5. Low V Data Retention Waveform
DD
CMOS
90%
VDD2-0.05V
188 ohms
10%
1.4V
0.0V
< 2ns
< 2ns
50pF
Input Pulses
Notes:
1. 50pF including scope probe and test socket.
2. Measurement of data output occurs at the low to high or high to low transition mid-point
(i.e., CMOS input = VDD2/2).
Figure 6. AC Test Loads and Input Waveforms
11
AEROFLEX [ AEROFLEX CIRCUIT TECHNOLOGY ]
