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UT8Q1024K8 参数 Datasheet PDF下载

UT8Q1024K8图片预览
型号: UT8Q1024K8
PDF下载: 下载PDF文件 查看货源
内容描述: 高性能1M字节( 8Mbit的) CMOS静态RAM [high-performance 1M byte (8Mbit) CMOS static RAM]
分类和应用:
文件页数/大小: 15 页 / 239 K
品牌: AEROFLEX [ AEROFLEX CIRCUIT TECHNOLOGY ]
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ABSOLUTE MAXIMUM RATINGS
1
(Referenced to V
SS
)
SYMBOL
V
DD
V
I/O
T
STG
P
D
T
J
Θ
JC
I
I
PARAMETER
DC supply voltage
Voltage on any pin
Storage temperature
Maximum power dissipation
Maximum junction temperature
2
Thermal resistance, junction-to-case
3
DC input current
LIMITS
-0.5 to 4.6V
-0.5 to 4.6V
-65 to +150°C
1.0W (per byte)
+150°C
10°C/W
±
10 mA
Notes:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, and functional operation of the device
at these or any other conditions beyond limits indicated in the operational sections of this specification is not recommended. E xposure to absolute maximum rating
conditions for extended periods may affect device reliability and performance.
2. Maximum junction temperature may be increased to +175
°C
during burn-in and steady-static life.
3. Test per MIL-STD-883, Method 1012.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
DD
T
C
V
IN
PARAMETER
Positive supply voltage
Case temperature range
DC input voltage
LIMITS
3.0 to 3.6V
-40 to +125°C
0V to V
DD
4