Preliminary Data Sheet, Rev. 1
June 2001
R2560A High-Power 12 GHz Photodiode
Description
The R2560A incorporates a high-speed planar PIN
diode to provide a highly reliable, high-power photo-
diode module. This module is well suited for receiver
applications with optical preamplification. The diode
is well matched over the operating frequency band,
thereby simplifying high-speed integration.
Block Diagram
Features
PIN
PHOTODIODE
s
s
s
s
s
s
s
Highly reliable planar photodiode technology
High power capability
dc coupled
High breakdown voltage
Bandwidth >13 GHz typical
Good RF match: >13 dB typical return loss
Hermetically sealed
PIN 3
+10 V BIAS
100
RF OUT
100
PIN 6
CASE GROUND
1-1176 (F)
Applications
Pin Information
s
Optically amplified systems (following EDFA or
Raman amplifiers)
Linear receiver applications
FEC and Super-FEC to 12.5 Gbits/s
Table 1. Pin Descriptions
Pin No.
1
2
3
4
5
6
Description
NC
NC
10 V (V
PD
)
NC
NC
Ground
s
s
AGERE [ AGERE SYSTEMS ]
