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AT-30511-TR1 参数 Datasheet PDF下载

AT-30511-TR1图片预览
型号: AT-30511-TR1
PDF下载: 下载PDF文件 查看货源
内容描述: 低电流,高性能硅NPN双极晶体管 [Low Current, High Performance NPN Silicon Bipolar Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 10 页 / 101 K
品牌: AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
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Low Current, High Performance
NPN Silicon Bipolar Transistor
Technical Data
AT-30511
AT-30533
Features
• High Performance Bipolar
Transistor Optimized for
Low Current, Low Voltage
Operation
• 900 MHz Performance:
AT-30511: 1.1 dB NF, 16 dB G
A
AT-30533: 1.1 dB NF, 13 dB G
A
• Characterized for End-Of-
Life Battery Use (2.7 V)
• SOT-23 and SOT-143 SMT
Plastic Packages
• Tape-And-Reel Packaging
Option Available
[1]
Description
Hewlett-Packard’s AT-30511 and
AT-30533 are high performance
NPN bipolar transistors that have
been optimized for maximum f
T
at
low voltage operation, making
them ideal for use in battery
powered applications in wireless
markets. The AT-30533 uses the 3
lead SOT-23, while the AT-30511
places the same die in the higher
performance 4 lead SOT-143. Both
packages are industry standard,
and compatible with high volume
surface mount assembly
techniques.
The 3.2 micron emitter-to-emitter
pitch and reduced parasitic design
of these transistors yields
extremely high performance
products that can perform a multi-
plicity of tasks. The 5 emitter
finger interdigitated geometry
yields an extremely fast transistor
with high gain and low operating
currents.
Optimized performance at 2.7 V
makes these devices ideal for use
in 900 MHz, 1.8 GHz, and 2.4 GHz
battery operated systems as an
LNA, gain stage, buffer, oscillator,
or active mixer. Typical amplifier
designs at 900 MHz yield 1.3 dB
noise figures with 13 dB or more
associated gain at a 2.7 V, 1 mA
bias. Voltage breakdowns are high
enough for use at 5 volts. High
gain capability at 1 V, 1 mA makes
these devices a good fit for
900 MHz pager applications.
The AT-3 series bipolar transistors
are fabricated using an optimized
version of Hewlett- Packard’s
10 GHz f
T
, 30 GHz f
MAX
Self-
Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by the
use of ion-implantation, self-
alignment techniques, and gold
metalization in the fabrication of
these devices.
Outline Drawing
EMITTER COLLECTOR
305
BASE
EMITTER
SOT-143 (AT-30511)
COLLECTOR
305
BASE
EMITTER
SOT-23 (AT-30533)
Note:
1. Refer to “Tape-and-Reel Packaging for
Semiconductor Devices”.
4-23
5965-8918E