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ATF-531P8-TR1 参数 Datasheet PDF下载

ATF-531P8-TR1图片预览
型号: ATF-531P8-TR1
PDF下载: 下载PDF文件 查看货源
内容描述: 高线性度增强模式伪HEMT在2×2毫米的LPCC包装 [High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm LPCC Package]
分类和应用: 晶体小信号场效应晶体管射频小信号场效应晶体管光电二极管放大器PC
文件页数/大小: 16 页 / 143 K
品牌: AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
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Agilent ATF-531P8 High Linearity
Enhancement Mode
[1]
Pseudomorphic HEMT in
2x2 mm
2
LPCC
[3]
Package
Data Sheet
Features
• Single voltage operation
• High linearity and gain
• Low noise figure
Description
Agilent Technologies’s
ATF-531P8 is a single-voltage
high linearity, low noise
E-pHEMT housed in an 8-lead
JEDEC-standard leadless
plastic chip carrier (LPCC
[3]
)
package. The device is ideal as
a high linearity, low-noise,
medium-power amplifier. Its
operating frequency range is
from 50 MHz to 6 GHz.
The thermally efficient package
measures only 2 mm x 2 mm x
0.75 mm. Its backside
metalization provides excellent
thermal dissipation as well as
visual evidence of solder reflow.
The device has a Point MTTF of
over 300 years at a mounting
temperature of +85°C. All
devices are 100% RF & DC tested.
Note:
1. Enhancement mode technology employs a
single positive V
gs
, eliminating the need of
negative gate voltage associated with
conventional depletion mode devices.
2. Refer to reliability datasheet for detailed
MTTF data.
3. Conforms to JEDEC reference outline MO229
for DRP-N
4. Linearity Figure of Merit (LFOM) is essentially
OIP3 divided by DC bias power.
Pin Connections and
Package Marking
Pin 8
Pin 7 (Drain)
Pin 6
Pin 5
• Excellent uniformity in product
specifications
Pin 1 (Source)
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
Source
(Thermal/RF Gnd)
• Small package size:
2.0 x 2.0 x 0.75 mm
• Point MTTF > 300 years
[2]
• MSL-1 and lead-free
• Tape-and-reel packaging option
available
Bottom View
Pin 1 (Source)
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
Pin 8
3Px
Top View
Pin 7 (Drain)
Pin 6
Pin 5
Specifications
2 GHz; 4V, 135 mA (Typ.)
• 38 dBm output IP3
• 0.6 dB noise figure
• 20 dB gain
• 10.7 dB LFOM
[4]
• 24.5 dBm output power at 1 dB gain
compression
Applications
• Front-end LNA Q1 and Q2 driver or
pre-driver amplifier for Cellular/
PCS and WCDMA wireless
infrastructure
• Driver amplifier for WLAN,
WLL/RLL and MMDS applications
• General purpose discrete E-pHEMT
for other high linearity applications
Note:
Package marking provides orientation and
identification:
“3P” = Device Code
“x” = Date code indicates the month of
manufacture.