ATF-54143 Absolute Maximum Ratings
[1]
Symbol
V
DS
V
GS
V
GD
I
DS
P
diss
P
in max.
I
GS
T
CH
T
STG
θ
jc
120
0.7V
Parameter
Drain - Source Voltage
[2]
Gate - Source Voltage
[2]
Gate Drain Voltage
[2]
Drain Current
[2]
Total Power Dissipation
[3]
RF Input Power
Gate Source Current
Channel Temperature
Storage Temperature
Thermal Resistance
[4]
Units
V
V
V
mA
mW
dBm
mA
°C
°C
°C/W
Absolute
Maximum
5
-5 to 1
5
120
360
10
[5]
2
[5]
150
-65 to 150
162
Notes:
1. Operation of this device in excess of any one
of these parameters may cause permanent
damage.
2. Assumes DC quiescent conditions.
3. Source lead temperature is 25°C. Derate
6 mW/°C for T
L
> 92°C.
4. Thermal resistance measured using
150°C Liquid Crystal Measurement method.
5. The device can handle +10 dBm RF Input
Power provided I
GS
is limited to 2 mA. I
GS
at
P
1dB
drive level is bias circuit dependent. See
application section for additional information.
100
0.6V
80
I
DS
(mA)
60
0.5V
40
20
0
0
1
2
3
4
V
DS
(V)
5
6
7
0.4V
0.3V
Figure 1. Typical I-V Curves.
(V
GS
= 0.1 V per step)
Product Consistency Distribution Charts
[6, 7]
160
Cpk = 0.77
Stdev = 1.41
200
Cpk = 1.35
Stdev = 0.4
160
160
Cpk = 1.67
Stdev = 0.073
120
120
120
80
-3 Std
-3 Std
80
+3 Std
80
+3 Std
40
40
40
0
30
32
34
36
OIP3 (dBm)
38
40
42
0
14
15
16
17
GAIN (dB)
18
19
0
0.25
0.45
0.65
NF (dB)
0.85
1.05
Figure 2. OIP3 @ 2 GHz, 3 V, 60 mA.
LSL = 33.0, Nominal = 36.575
Figure 3. Gain @ 2 GHz, 3 V, 60 mA.
USL = 18.5, LSL = 15, Nominal = 16.6
Figure 4. NF @ 2 GHz, 3 V, 60 mA.
USL = 0.9, Nominal = 0.49
Notes:
6. Distribution data sample size is 450 samples taken from 9 different wafers. Future wafers allocated to this product may have nominal values anywhere
between the upper and lower limits.
7. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match based on
production test equipment. Circut losses have been de-embeaded from actual measurements.
2
AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
