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ATF-551M4-TR1 参数 Datasheet PDF下载

ATF-551M4-TR1图片预览
型号: ATF-551M4-TR1
PDF下载: 下载PDF文件 查看货源
内容描述: 低噪声增强模式伪HEMT的微型无铅封装 [Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package]
分类和应用: 晶体小信号场效应晶体管射频小信号场效应晶体管放大器
文件页数/大小: 24 页 / 198 K
品牌: AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
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Agilent ATF-551M4 Low Noise
Enhancement Mode
Pseudomorphic HEMT in a
Miniature Leadless Package
Data Sheet
Features
• Very low noise figure and high
linearity
• Single Supply Enhancement Mode
Technology
[1]
optimized for 3V
operation
Description
Agilent Technologies’ ATF-551M4
is a high dynamic range, super
low noise, single supply
E-pHEMT GAAs FET housed in a
thin miniature leadless package.
The combination of small device
size, super low noise (under 1 dB
Fmin from 2 to 6 GHz), high
linearity and low power makes
the ATF-551M4 ideal for LNA or
hybrid module designs in wire-
less receiver in the 450 MHz to
10 GHz frequency band.
Applications include Cellular/
PCS/ WCDMA handsets and data
modem cards, fixed wireless
infrastructure in the 2.4, 3.5 GHz
and UNII frequency bands, as
well as 2.4 GHz 802.11b, 5 GHz
802.11a and HIPERLAN/2
Wireless LAN PC-cards.
MiniPak 1.4 mm x 1.2 mm Package
• Excellent uniformity in product
specifications
• 400 micron gate width
• Thin miniature package
1.4 mm x 1.2 mm x 0.7 mm
• Tape-and-reel packaging option
available
Pin Connections and
Package Marking
Source
Pin 3
Drain
Pin 4
Vx
Specifications
• 2 GHz; 2.7V, 10 mA (typ.)
• 24.1 dBm output 3
rd
order intercept
• 14.6 dBm output power at 1 dB gain
compression
• 0.5 dB noise figure
• 17.5 dB associated gain
Vx
Gate
Pin 2
Source
Pin 1
Note:
Top View. Package marking provides orientation,
product identification and date code.
“V” = Device Type Code
“x” = Date code character. A different
character is assigned for each month and
year.
Applications
• Low Noise Amplifier for:
– Cellular/PCS/WCDMA hand-
sets and modem cards
– 2.4 GHz, 3.5 GHz and UNII fixed
wireless infrastructure
– 2.4 GHz 802.11b Wireless LAN
– 5 GHz 802.11a and HIPERLAN
Wireless LAN
• General purpose discrete E-pHEMT
for other ultra low noise applications
Note:
1. Agilent’s enhancement mode E-pHEMT
devices are the first commercially available
single-supply GaAs transistors that do not
need a negative gate bias voltage for
operation. They can help simplify the design
and reduce the cost of receivers and
transmitters in many applications in the
450 MHz to 10 GHz frequency range.