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ATF-551M4-TR1 参数 Datasheet PDF下载

ATF-551M4-TR1图片预览
型号: ATF-551M4-TR1
PDF下载: 下载PDF文件 查看货源
内容描述: 低噪声增强模式伪HEMT的微型无铅封装 [Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package]
分类和应用: 晶体小信号场效应晶体管射频小信号场效应晶体管放大器
文件页数/大小: 24 页 / 198 K
品牌: AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
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ATF-551M4 Typical Scattering Parameters, VDS = 2.7V, IDS = 20 mA  
Freq.  
GHz  
S11  
S21  
Mag.  
S12  
S22  
MSG/MAG  
dB  
Mag.  
Ang.  
dB  
Ang.  
Mag.  
Ang.  
Mag.  
Ang.  
0.1  
0.995  
0.943  
0.883  
0.87  
-6.8  
22.92  
22.35  
21.53  
21.30  
20.00  
18.91  
18.65  
17.35  
16.14  
14.02  
12.25  
10.84  
9.61  
13.988  
13.103  
11.932  
11.616  
10.004  
8.822  
8.557  
7.367  
6.411  
5.026  
4.095  
3.483  
3.022  
2.695  
2.429  
2.213  
2.034  
1.876  
1.722  
1.59  
175.4  
155.9  
140.7  
137.3  
121.6  
111.0  
108.6  
97.8  
0.005  
0.024  
0.04  
86.4  
70.6  
59.4  
56.9  
46.2  
39.6  
38.2  
32.3  
27.8  
22.0  
18.6  
17.4  
16.1  
14.8  
13.0  
9.9  
0.772  
0.72  
-3.4  
34.47  
27.37  
24.75  
24.32  
22.52  
21.46  
21.26  
20.28  
19.50  
18.20  
17.15  
16.23  
14.69  
13.08  
12.08  
11.08  
10.44  
9.85  
0.5  
-33.0  
-56.9  
-62.4  
-87.6  
-104.9  
-108.8  
-126.7  
-142.1  
-166.3  
175.2  
162.6  
150.9  
141.2  
130.8  
118.1  
105.4  
91.4  
-15.7  
-27.1  
-29.6  
-40.2  
-46.7  
-48.1  
-54.2  
-59.0  
-67.2  
-75.7  
-80.7  
-90.4  
-100.6  
-113.5  
-127.2  
-140.4  
-152.2  
-165.9  
173.7  
151.1  
129.5  
107.3  
88.8  
0.9  
0.662  
0.643  
0.557  
0.494  
0.48  
1.0  
0.043  
0.056  
0.063  
0.064  
0.069  
0.072  
0.076  
0.079  
0.083  
0.087  
0.093  
0.099  
0.107  
0.116  
0.126  
0.136  
0.146  
0.154  
0.159  
0.165  
0.168  
1.5  
0.798  
0.752  
0.743  
0.704  
0.68  
1.9  
2.0  
2.5  
0.417  
0.367  
0.297  
0.251  
0.216  
0.199  
0.185  
0.177  
0.178  
0.186  
0.198  
0.193  
0.188  
0.2  
3.0  
88.4  
4.0  
0.66  
72.8  
5.0  
0.662  
0.664  
0.667  
0.67  
59.5  
6.0  
48.4  
7.0  
37.6  
8.0  
8.61  
27.3  
9.0  
0.679  
0.677  
0.683  
0.688  
0.705  
0.741  
0.75  
7.71  
16.9  
10.0  
11.0  
12.0  
13.0  
14.0  
15.0  
16.0  
17.0  
18.0  
6.90  
6.0  
6.17  
-4.6  
6.4  
5.46  
-15.8  
-26.5  
-38.3  
-49.5  
-60.1  
-70.3  
-80.2  
1.8  
80.9  
4.72  
-3.2  
9.37  
66.5  
4.03  
-9.8  
9.78  
55.0  
3.19  
1.444  
1.291  
1.156  
1.032  
-16.5  
-23.2  
-29.8  
-36.6  
8.35  
0.803  
0.823  
0.872  
45.1  
2.22  
0.224  
0.269  
0.325  
9.10  
37.2  
1.26  
8.45  
31.0  
0.27  
7.88  
Typical Noise Parameters, VDS = 2.7V, IDS = 20 mA  
40  
30  
20  
10  
0
Freq  
GHz  
Fmin  
dB  
Γopt  
Γopt  
Rn/50  
Ga  
Mag.  
Ang.  
dB  
MSG  
0.5  
0.9  
1.0  
1.9  
2.0  
2.4  
3.0  
3.9  
5.0  
5.8  
6.0  
7.0  
8.0  
9.0  
10.0  
0.18  
0.18  
0.23  
0.39  
0.36  
0.43  
0.51  
0.56  
0.68  
0.83  
0.85  
0.95  
1.06  
1.19  
1.41  
0.61  
0.55  
0.49  
0.43  
0.42  
0.37  
0.29  
0.26  
0.28  
0.33  
0.33  
0.37  
0.41  
0.47  
0.46  
-6.7  
0.12  
0.11  
0.10  
0.09  
0.09  
0.09  
0.08  
0.07  
0.05  
0.05  
0.05  
0.06  
0.08  
0.10  
0.17  
24.89  
22.72  
22.68  
19.18  
18.98  
17.83  
16.69  
15.19  
13.79  
12.91  
12.73  
11.80  
11.06  
10.47  
9.59  
5.9  
9.9  
MAG  
MSG  
37.8  
2
41.6  
|S |  
21  
51.7  
73.6  
-10  
110.7  
152.8  
172.9  
175.6  
-162.4  
-148.8  
-135.5  
-119.2  
0
5
10  
FREQUENCY (GHz)  
15  
20  
Figure 31. MSG/MAG and |S21|2 vs.  
Frequency at 2.7V, 20 mA.  
Notes:  
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these  
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.  
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of  
the gate pad. The output reference plane is at the end of the drain pad.  
13