ATF-551M4 Typical Performance Curves,
continued
30
-40°C
25°C
85°C
1.6
1.4
1.2
-40°C
25°C
85°C
25
24
23
22
21
20
19
-40°C
25°C
85°C
25
GAIN (dB)
20
Fmin (dB)
1.0
0.8
0.6
0.4
15
10
0.2
5
0
1
2
3
4
5
6
FREQUENCY (GHz)
0
0
1
2
3
4
5
6
FREQUENCY (GHz)
OIP3 (dBm)
0
1
2
3
4
5
6
FREQUENCY (GHz)
Figure 21. Gain vs. Temperature and
Frequency with Bias at 2.7V, 10 mA
[1]
.
20
15
10
5
0
-5
-10
-40°C
25°C
85°C
Figure 22. Fmin vs. Temperature and
Frequency with Bias at 2.7V, 10 mA
[2]
.
16
15
14
13
12
11
10
-40°C
25°C
85°C
Figure 23. OIP3 vs. Temperature and
Frequency with Bias at 2.7V, 10 mA
[1]
.
0
1
2
3
4
5
6
P1dB (dBm)
IIP3 (dBm)
0
1
2
3
4
5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 24. IIP3 vs. Temperature and
Frequency with Bias at 2.7V, 10 mA
[1]
.
Figure 25. P1dB vs. Temperature and
Frequency with Bias at 2.7V, 10 mA
[1]
.
Notes:
1. Measurements at 2 GHz were made on a fixed tuned production test board that was tuned for optimal OIP3 match with reasonable noise figure at 2.7 V, 10
mA bias. This circuit represents a trade-off between optimal noise match, maximum OIP3 match and a realizable match based on production test board
requirements. Measurements taken above and below 2 GHz was made using a double stub tuner at the input tuned for low noise and a double stub tuner at
the output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements.
2. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
3. P1dB measurements are performed with passive biasing. Quiescent drain current, Idsq, is set with zero RF drive applied. As P1dB is approached, the drain
current may increase or point. At lower values of Idsq, the device is running close to class B as power output approaches P1dB. This results in higher P1dB
and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing. As
an example, at a VDS = 2.7V and Idsq = 5 mA, Id increases to 15 mA as a P1dB of +14.5 dBm is approached.
7
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