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HCPL-3120 参数 Datasheet PDF下载

HCPL-3120图片预览
型号: HCPL-3120
PDF下载: 下载PDF文件 查看货源
内容描述: 2.0安培输出电流IGBT栅极驱动光电耦合器 [2.0 Amp Output Current IGBT Gate Drive Optocoupler]
分类和应用: 栅极光电输出元件双极性晶体管栅极驱动
文件页数/大小: 16 页 / 254 K
品牌: AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
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Notes:
1. Derate linearly above 70°C free-air
temperature at a rate of 0.3 mA/°C.
2. Maximum pulse width = 10
µs,
maximum duty cycle = 0.2%. This
value is intended to allow for
component tolerances for designs
with I
O
peak minimum = 2.0 A. See
Applications section for additional
details on limiting I
OH
peak.
3. Derate linearly above 70°C free-air
temperature at a rate of 4.8 mW/°C.
4. Derate linearly above 70°C free-air
temperature at a rate of 5.4 mW/°C.
The maximum LED junction tempera-
ture should not exceed 125°C.
5. Maximum pulse width = 50
µs,
maximum duty cycle = 0.5%.
6. In this test V is measured with a dc
OH
load current. When driving capacitive
loads V
OH
will approach V
CC
as I
OH
approaches zero amps.
7. Maximum pulse width = 1 ms,
maximum duty cycle = 20%.
8. In accordance with UL1577, each
optocoupler is proof tested by
applying an insulation test voltage
3000 Vrms for 1 second (leakage
detection current limit, I
I-O
5
µA).
This test is performed before the
100% production test for partial
discharge (method b) shown in the
VDE 0884 Insulation Characteristic
Table, if applicable.
9. Device considered a two-terminal
device: pins 1, 2, 3, and 4 shorted
together and pins 5, 6, 7, and 8
shorted together.
10. The difference between t
PHL
and t
PLH
between any two HCPL-3120 parts
under the same test condition.
11. Pins 1 and 4 need to be connected to
LED common.
12. Common mode transient immunity in
the high state is the maximum
tolerable dV
CM
/dt of the common
mode pulse, V
CM
, to assure that the
output will remain in the high state
(i.e., V
O
> 15.0 V).
13. Common mode transient immunity in
a low state is the maximum tolerable
dV
CM
/dt of the common mode pulse,
V
CM
, to assure that the output will
remain in a low state (i.e., V
O
< 1.0 V).
14. This load condition approximates the
gate load of a 1200V/75A IGBT.
15. Pulse Width Distortion (PWD) is
defined as |t
PHL
-t
PLH
| for any given
device.
(V
OH
– V
CC
) – OUTPUT HIGH VOLTAGE DROP – V
(V
OH
– V
CC
) – HIGH OUTPUT VOLTAGE DROP – V
0
I
OH
– OUTPUT HIGH CURRENT – A
2.0
-1
100 °C
25 °C
-40 °C
-1
I
F
= 7 to 16 mA
I
OUT
= -100 mA
V
CC
= 15 to 30 V
V
EE
= 0 V
1.8
I
F
= 7 to 16 mA
V
OUT
= (V
CC
- 4 V)
V
CC
= 15 to 30 V
V
EE
= 0 V
-2
1.6
-3
-2
1.4
-4
I
F
= 7 to 16 mA
V
CC
= 15 to 30 V
V
EE
= 0 V
0
0.5
1.0
1.5
2.0
2.5
-3
1.2
1.0
-40 -20
-5
-6
-4
-40 -20
0
20
40
60
80
100
0
20
40
60
80
100
T
A
– TEMPERATURE – °C
T
A
– TEMPERATURE – °C
I
OH
– OUTPUT HIGH CURRENT – A
Figure 1. V
OH
vs. Temperature.
Figure 2. I
OH
vs. Temperature.
Figure 3. V
OH
vs. I
OH
.
0.25
V
OL
– OUTPUT LOW VOLTAGE – V
I
OL
– OUTPUT LOW CURRENT – A
0.20
3
V
OL
– OUTPUT LOW VOLTAGE – V
V
F(OFF)
= -3.0 to 0.8 V
I
OUT
= 100 mA
V
CC
= 15 to 30 V
V
EE
= 0 V
4
V
F(OFF)
= -3.0 to 0.8 V
V
OUT
= 2.5 V
V
CC
= 15 to 30 V
V
EE
= 0 V
4
V
F(OFF)
= -3.0 to 0.8 V
V
CC
= 15 to 30 V
V
EE
= 0 V
3
0.15
2
2
0.10
0.05
0
-40 -20
1
1
100 °C
25 °C
-40 °C
0
0.5
1.0
1.5
2.0
2.5
I
OL
– OUTPUT LOW CURRENT – A
0
20
40
60
80
100
0
-40 -20
0
20
40
60
80
100
0
T
A
– TEMPERATURE – °C
T
A
– TEMPERATURE – °C
Figure 4. V
OL
vs. Temperature.
Figure 5. I
OL
vs. Temperature.
Figure 6. V
OL
vs. I
OL
.
1-188