IAM-81008 Absolute Maximum Ratings
Parameter
AbsoluteMaximum[1]
Thermal Resistance:
θjc =80°C/W
Device Voltage
Power Dissipation2,3
RF Input Power
LO Input Power
Junction Temperature
Storage Temperature
10V
300mW
+14dBm
+14dBm
150°C
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE =25°C.
3. Derate at 4.4 mW/°C for TC > 82°C.
–65to150°C
IAM-81008 Part Number Ordering Information
Part Number
Devices Per Reel
Reel Size
IAM-81008-TR1
1000
7"
For more information, see “Tape and Reel Packaging for Semmiconductor Devices”.
IAM-81008 Electrical Specifications[1], TA = 25°C
Symbol Parameters and Test Conditions: Vcc = 5 V, ZO = 50 Ω, LO =–5 dBm, RF = –20 dBm Units
Min.
Typ.
Max.
GC
Conversion Gain
RF=2GHz,LO=1.75GHz
IF=250MHz
dB
6.0
8.5
3.5
10
F3 dBRF RF Bandwidth (GC 3 dB Down)
F3 dB IF IF Bandwidth (GC 3 dB Down)
GHz
GHz
LO=2GHz
0.6
P1 dB
IP3
IF Output Power at 1 dB Gain Compression
RF=2GHz,LO=1.75GHz dBm
RF=2GHz,LO=1.75GHz dBm
–6
IF Output Third Order Intercept Point
SSB Noise Figure
3
NF
RF=2GHz,LO=1.75GHz
f=0.05to3.5GHz
f=0.05to3.5GHz
f<1GHz
dB
17
RF Port VSWR
1.5:1
2.0:1
1.5:1
–25
–25
–30
13
VSWR
LO Port VSWR
IF Port VSWR
RFif
LOif
LOrf
ICC
RF Feedthrough at IF Port
LO Leakage at IF Port
LO Leakage at RF Port
Supply Current
RF=2GHz,LO=1.75GHz dBc
LO=1.75GHz
LO=1.75GHz
dBm
dBm
mA
10
16
Note:
1. The recommended operating voltage range for this device is 4 to 8 V. Typical performance as a function of voltage is on
the following page.
7-120