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EW-6672 参数 Datasheet PDF下载

EW-6672图片预览
型号: EW-6672
PDF下载: 下载PDF文件 查看货源
内容描述: EW- 6672是由超高灵敏度的InSb霍尔元件和包中的信号处理的IC芯片的 [EW-6672 is composed of a Ultra-high sensitive InSb Hall element and a signal processing IC chip in a package]
分类和应用: 模拟IC信号电路光电二极管
文件页数/大小: 3 页 / 131 K
品牌: AKM [ ASAHI KASEI MICROSYSTEMS ]
 浏览型号EW-6672的Datasheet PDF文件第2页浏览型号EW-6672的Datasheet PDF文件第3页  
Hybrid Hall Effect ICs EW-series
EW-6672
Unipolar Hall
Effect Switch
Supply Voltage
2.4∼3.3V
●Operational Characteristics
Vout
S
Marking
H
V
OH
Shipped in packet-tape reel(3000pcs/Reel)
EW-6672 is composed of a Ultra-high sensitive InSb Hall element and a signal processing IC chip in a package.
Hall Element
Pulse
Excitation
Ultra High Sensitivity
Bop 1.5mT
Output
CMOS
SMT
1 VDD
2 VSS
1
3
3 OUT
N
V
OL
N-pole 0
Brp  Bop
L
S-pole
Bh
Magnetic flux density
●Functional Block Diagram
1:VDD
Item
Symbol
Limit
0.1
5.0
Unit
V
mA
Dynamic
Offset Cancellator
●Absolute Maximum Ratings(Ta=25℃)
Switch
Supply Voltage
VDD
Output
Current
I
out
3:OUT
±1
30
85
40
125
Operating Temperature Range
Topr
Storage Temperature Range
Tstg
2:VSS
Pulse
Hall
Chopper Amplifier
Regulator Element Stabilizer
Schmitt
trigger
&Latch
Output
Stage
●Magnetic
q
and Electrical Characteristics
(Ta=25℃ VDD=3V)
Item
Symbol
Conditions
Min.
2.4
1.0*
0.8
0.1*
Typ. Max. Unit
3.0
1.5
1.2
0.3
50
Io=−1.0mA
Io=+1.0mA
Average
5
VDD
−0.4
0.4
10
3.3
2.3
1.9*
0.6*
100
V
mT
mT
mT
ms
V
V
●Magnetic Characteristics
w
(Ta=−30℃∼85℃ VDD=3V)
Item
Symbol
Conditions
Min.
0.9
0.8
0.1
Typ. Max. Unit
1.5
1.2
0.3
2.9
2.3
0.8
mT
mT
mT
Supply Voltage
VDD
Operating Point
B
OP
Release Point
Hysteresis
Period
Brp
Bh
Tp
Operating Point
B
OP
Release Point
Hysteresis
Brp
Bh
Note) The above specifications are design targets.
●Application Circuit
GND
VSS
Output High Voltage
V
OH
Output Low Voltage
V
OL
Supply Current
IDD
μA
Bypass Capacitor
0.1μF
EM-6672
VDD
OUT
CMOS
1
[mT½ [Gauss½
=10
The characteristics with「*」marks are design targets.
VDD
67