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ALD1101APAL 参数 Datasheet PDF下载

ALD1101APAL图片预览
型号: ALD1101APAL
PDF下载: 下载PDF文件 查看货源
内容描述: 双N信道匹配组MOSFET [DUAL N-CHANNEL MATCHED MOSFET PAIR]
分类和应用:
文件页数/大小: 6 页 / 60 K
品牌: ALD [ ADVANCED LINEAR DEVICES ]
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ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, V
DS
Gate-source voltage, V
GS
Power dissipation
Operating temperature range
10.6V
10.6V
500mW
0°C to +70°C
-55°C to +125°C
-65°C to +150°C
+260°C
SAL, PALpackages
DA package
Storage temperature range
Lead temperature, 10 seconds
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
OPERATING ELECTRICAL CHARACTERISTICS
T
A
= 25
°
C unless otherwise specified
Parameter
Gate Threshold
Voltage
Offset Voltage
V
GS1
- V
GS2
Symbol
V
T
V
OS
-1.2
ALD 1101A
Min Typ
Max
0.4
0.7
1.0
2
-1.2
ALD1101B
Min Typ Max
0.4
0.7
1.0
5
-1.2
ALD1101
Min Typ Max
0.4
0.7
1.0
10
Unit
V
mV
mV/°C
Test
Conditions
I
DS
= 10µA V
GS
= V
DS
I
DS
= 100µA V
GS
= V
DS
Gate Threshold
TC
VT
Temperature Drift
On Drain Current
I
DS (ON)
25
5
40
10
0.5
200
50
75
25
5
40
10
0.5
200
50
75
25
5
40
10
0.5
200
50
75
mA
mmho
%
µmho
V
GS
= V
DS
= 5V
V
DS
= 5V I
DS
= 10mA
Transconductance G
fs
Mismatch
Output
Conductance
Drain Source
ON Resistance
Drain Source
ON Resistance
Mismatch
Drain Source
Breakdown
Voltage
Off Drain Current
∆G
fs
G
OS
R
DS(ON)
V
DS
= 5V I
DS
= 10mA
V
DS
= 0.1V V
GS
= 5V
∆R
DS(ON)
0.5
0.5
0.5
%
V
DS
= 0.1V V
GS
= 5V
BV
DSS
I
DS(OFF)
I
GSS
C
ISS
12
12
12
V
I
DS
= 10µA V
GS
=0V
V
DS
=12V V
GS
= 0V
T
A
= 125°C
V
DS
=0V V
GS
=12V
T
A
= 125°C
0.1
4
4
50
10
10
0.1
4
4
50
10
10
0.1
4
4
50
10
10
nA
µA
pA
nA
pF
Gate Leakage
Current
Input
Capacitance
1
1
1
6
6
6
ALD1101A/ALD1101B/ALD1101
Advanced Linear Devices
2 of 6