A
DVANCED
L
INEAR
D
EVICES,
I
NC.
ALD1101A/ALD1101B
ALD1101
DUAL N-CHANNEL MATCHED MOSFET PAIR
© 1998 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com
GENERAL DESCRIPTION
The ALD1101 is a monolithic dual N-channel matched transistor pair
intended for a broad range of analog applications. These enhancement-
mode transistors are manufactured with Advanced Linear Devices' en-
hanced ACMOS silicon gate CMOS process.
The ALD1101 offers high input impedance and negative current tempera-
ture coefficient. The transistor pair is matched for minimum offset voltage
and differential thermal response, and it is designed for switching and
amplifying applications in +2V to +12V systems where low input bias
current, low input capacitance and fast switching speed are desired. Since
these are MOSFET devices, they feature very large (almost infinite)
current gain in a low frequency, or near DC, operating environment. When
used with an ALD1102, a dual CMOS analog switch can be constructed.
In addition, the ALD1101 is intended as a building block for differential
amplifier input stages, transmission gates, and multiplexer applications.
The ALD1101 is suitable for use in precision applications which require
very high current gain, beta, such as current mirrors and current sources.
The high input impedance and the high DC current gain of the Field Effect
Transistors result in extremely low current loss through the control gate.
The DC current gain is limited by the gate input leakage current, which is
specified at 50pA at room temperature. For example, DC beta of the device
at a drain current of 5mA at 25°C is = 5mA/50pA = 100,000,000.
APPLICATIONS
•
•
•
•
•
•
•
•
•
Precision current mirrors
Precision current sources
Analog switches
Choppers
Differential amplifier
input stage
Voltage comparator
Data converters
Sample and Hold
Analog inverter
PIN CONFIGURATION
SOURCE
1
GATE
1
DRAIN
1
NC
1
2
3
4
TOP VIEW
DA, PA, SA PACKAGE
8
7
6
5
SUBSTRATE
SOURCE
2
GATE
2
DRAIN
2
FEATURES
• Low threshold voltage of 0.7V
• Low input capacitance
• Low Vos grades -- 2mV, 5mV, 10mV
• High input impedance -- 10
12
Ω
typical
• Negative current (I
DS
) temperature
coefficient
• Enhancement-mode (normally off)
• DC current gain 10
9
BLOCK DIAGRAM
ORDERING INFORMATION
Operating Temperature Range*
-55°C to +125°C
0°C to +70°C
0°C to +70°C
8-Pin
CERDIP
Package
8-Pin
Plastic Dip
Package
ALD1101A PA
ALD1101B PA
ALD1101 PA
8-Pin
SOIC
Package
DRAIN 1 (3)
GATE 1 (2)
SOURCE 1 (1)
SUBSTRATE (8)
DRAIN 2 (5)
SOURCE 2 (7)
GATE 2 (6)
ALD1101 DA
ALD1101 SA
* Contact factory for industrial temperature range.
© 1998 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com
ALD [ ADVANCED LINEAR DEVICES ]
