欢迎访问ic37.com |
会员登录 免费注册
发布采购

A1391SEHLT-T 参数 Datasheet PDF下载

A1391SEHLT-T图片预览
型号: A1391SEHLT-T
PDF下载: 下载PDF文件 查看货源
内容描述: 微功率3V线性霍尔效应传感器具有三态输出和用户可选休眠模式 [Micro Power 3V Linear Hall Effect Sensor with Tri-State Output and User-Selectable Sleep Mode]
分类和应用: 传感器换能器磁场传感器信息通信管理
文件页数/大小: 15 页 / 335 K
品牌: ALLEGRO [ ALLEGRO MICROSYSTEMS ]
 浏览型号A1391SEHLT-T的Datasheet PDF文件第5页浏览型号A1391SEHLT-T的Datasheet PDF文件第6页浏览型号A1391SEHLT-T的Datasheet PDF文件第7页浏览型号A1391SEHLT-T的Datasheet PDF文件第8页浏览型号A1391SEHLT-T的Datasheet PDF文件第10页浏览型号A1391SEHLT-T的Datasheet PDF文件第11页浏览型号A1391SEHLT-T的Datasheet PDF文件第12页浏览型号A1391SEHLT-T的Datasheet PDF文件第13页  
A1391 and A1392
Micro Power 3 V Linear Hall Effect Sensor with Tri-State Output and User-Selectable Sleep Mode
Characteristics Definitions
Ratiometric.
The A1391 and A1392 devices feature ratiometric
output. The quiescent voltage output and sensitivity are
proportional to the ratiometric supply reference voltage.
The percent ratiometric change in the quiescent voltage output is
defined as:
ΔV
OUTQ(ΔV)
=
ΔV
OUTQ(V
REF
)
÷
ΔV
OUTQ(3V)
V
REF
÷ 3 V
× 100
%
Linearity and Symmetry.
The on-chip output stage is
designed to provide a linear output with maximum supply voltage
of V
CCN
. Although application of very high magnetic fields will
not damage these devices, it will force the output into a non-lin-
ear region. Linearity in percent is measured and defined as
Lin+ =
V
OUT(+B)
V
OUTQ
2(V
OUT(+B / 2)
– V
OUTQ
)
V
OUT(–B)
V
OUTQ
2(V
OUT(–B / 2)
– V
OUTQ
)
× 100
%
(1)
(2)
(3)
(4)
and the percent ratiometric change in sensitivity is defined as:
ΔSens
(ΔV)
=
ΔSens
(V
REF
)
÷
ΔSens
(3V)
V
REF
÷ 3 V
Lin– =
× 100%
× 100
%
and output symmetry as
Sym =
V
OUT(+B)
V
OUTQ
V
OUTQ
– V
OUT(–B)
× 100
%
(5)
A1391-DS
Allegro MicroSystems, Inc.
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
9