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A3212EEHLT 参数 Datasheet PDF下载

A3212EEHLT图片预览
型号: A3212EEHLT
PDF下载: 下载PDF文件 查看货源
内容描述: 微功耗,超灵敏霍尔EF FECT开关 [MICROPOWER, ULTRA-SENSITIVE HALL-EF FECT SWITCH]
分类和应用: 模拟IC开关信号电路信息通信管理
文件页数/大小: 13 页 / 381 K
品牌: ALLEGRO [ ALLEGRO MICROSYSTEMS ]
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A3212
MICROPOWER, ULTRA-SENSITIVE
HALL-EFFECT SWITCH
The A3212 integrated circuit is an ultra-sensitive, pole independent Hall-effect
switch with a latched digital output. This sensor is especially suited for opera-
tion in battery-operated, hand-held equipment such as cellular and cordless
telephones, pagers, and palmtop computers. A 2.5 volt to 3.5 volt operation and a
unique clocking scheme reduce the average operating power requirements to less
than 15
µW
with a 2.75 volt supply.
Unlike other Hall-effect switches, either a north or south pole of sufficient
strength will turn the output on; in the absence of a magnetic field, the output
is off. The polarity independence and minimal power requirement allow these
devices to easily replace reed switches for superior reliability and ease of manu-
facturing, while eliminating the requirement for signal conditioning.
Improved stability is made possible through chopper stabilization (dynamic off-
set cancellation), which reduces the residual offset voltage normally caused by
device overmolding, temperature dependencies, and thermal stress.
This device includes on a single silicon chip a Hall-voltage generator, small-sig-
nal amplifier, chopper stabilization, a latch, and a MOSFET output. Advanced
BiCMOS processing is used to take advantage of low-voltage and low-power
requirements, component matching, very low input-offset errors, and small com-
ponent geometries.
Four package styles provide magnetically optimized solutions for most appli-
cations. Miniature low-profile surface-mount package types
EH
and
EL
(0.75 and 0.50 mm nominal height) are leadless,
LH
is a leaded low-profile
SMD, and
UA
is a three-lead SIP for through-hole mounting. Each package is
available in a lead (Pb) free version (suffix,
–T)
with 100% matte tin plated lead-
frame. EL package for limited release, engineering samples available.
FEATURES
Micropower Operation
Operation with North or South Pole
2.5 V to 3.5 V Battery Operation
Chopper Stabilized
Superior Temperature Stability
Extremely Low Switch-Point Drift
Insensitive to Physical Stress
ESD Protected to 5 kV
Solid-State Reliability
Small Size
Easily Manufacturable with Magnet Pole Independence
Data Sheet
27622.61G
2 x 2 mm MLPD
Package A3212EELLT-T
Approximate actual size
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, V
DD
..............................
5 V
Magnetic Flux Density, B ..........
Unlimited
Output Off Voltage, V
OUT
......................
5 V
Output Current, I
OUT
...........................
1 mA
Junction Temperature, T
J
................
+170°C
Operating Temperature, T
A
Range 'E-' ....................
-40°C to +85°C
Range 'L-' ..................
-40°C to +150°C
Storage Temperature Range,
T
S
..............................
-65°C to +170°C
Caution: These CMOS devices have input
static protection (Class 3) but are still sus-
ceptible to damage if exposed to extremely
high static electrical charges.