3977
MICROSTEPPPING DMOS DRIVER
WITH TRANSLATOR
ELECTRICAL CHARACTERISTICS at T
A
= +25°C, V
BB
= 35 V, V
DD
= 3.0 V to 5.5V (unless otherwise
noted)
Limits
Characteristic
Control Logic (cont’d)
Mixed Decay Trip Point
Symbol
Test Conditions
Min.
Typ.
Max.
–
–
V
DD
±3.0
±10
±5.0
±5.0
800
–
–
2.95
–
12
10
20
Units
V
V
V
µA
%
%
%
ns
°C
°C
V
V
mA
mA
µA
PFDH
–
0.6V
DD
PFDL
–
0.21V
DD
Ref. Input Voltage Range
V
REF
Operating
0
–
Reference Input Current
I
REF
–
0
E
G
V
REF
= 2 V, Phase Current = 38.27%
–
–
Gain (G
m
) Error
V
REF
= 2 V, Phase Current = 70.71%
–
–
(note 3)
–
–
V
REF
= 2 V, Phase Current = 100.00%
Crossover Dead Time
t
DT
SR enabled
100
475
–
165
Thermal Shutdown Temp.
T
J
Thermal Shutdown Hysteresis
∆T
J
–
15
2.45
2.7
UVLO Enable Threshold
V
UVLO
Increasing V
DD
UVLO Hysteresis
∆V
UVLO
0.05
0.10
Logic Supply Current
I
DD
f
PWM
< 50 kHz
–
–
Outputs off
–
–
Sleep mode
–
–
* Operation at a step frequency greater than the specified minimum value is possible but not warranteed.
NOTES: 1. Typical Data is for design information only.
2. Negative current is defined as coming out of (sourcing) the specified device terminal.
3. E
G
= ([V
REF
/8] – V
SENSE
)/(V
REF
/8)
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