A3980
Automotive DMOS Microstepping Driver
with Translator
ELECTRICAL CHARACTERISTICS
(continued) at T
J
= –40°C to +150ºC, V
BB
= 14 V, V
DD
= 3.0 to 5.5 V (unless otherwise noted)
Characteristics
Current Control
Blank Time
Fixed Off Time
Mixed Decay Trip Points
Crossover Dead Time
Recommended Reference Input Voltage
Reference Input Current
2
Current Trip-Level Error
3
Thermal Protection
Thermal Shutdown
Thermal Shutdown Hysteresis
Diagnostics
Max V
DS
on High-Side Bridge FETs
Max V
DS
on Low-Side Bridge FETs
V
DS
Fault Measurement Delay
Minimum Load Current
V
BB
Overvoltage Lockout
V
BB
Overvoltage Lockout Hysteresis
V
REG
Undervoltage Lockout
V
DD
Enable Threshold
V
DD
Enable Threshold Hysteresis
V
DSHT
V
DSLT
t
SCT
I
OC
V
OVB
V
OVBH
V
UVR
V
UVD
V
UVDH
Sampled after t
BLANK
+ t
SCT
Sampled after t
BLANK
+ t
SCT
T
SD
T
SDH
t
BLANK
t
OFF
PFD
H
PFD
L
t
DT
V
REF
I
REF
err
I
R
T
= 56 K , C
T
= 680 pF
R
T
= 56 K , C
T
= 680 pF
700
30
950
38
0.60 V
DD
0.21 V
DD
475
1200
46
ns
μs
V
ns
V
μA
%
Symbol
Test Conditions
Min.
Typ.
1
Max.
Units
–
–
–
–
2 V < V
REF
< 4 V, %I
TripMAX
= 38%
2 V < V
REF
< 4 V, %I
TripMAX
= 70%
2 V < V
REF
< 4 V, %I
TripMAX
= 100%
–
100
0.8
–3
–
800
4
3
±15
±10
±5
–
0
–
–
–
–
160
170
15
180
ºC
ºC
–
–
–
–
–
32
2
5.3
2.45
50
–
–
–
–
–
36
4
6.0
2.95
1.5
1.5
700
35
34
V
V
ns
%
V
V
V
V
mV
–
w.r.t. I
TRIPMAX
at Home position
V
BB
rising
–
V
REG
falling
V
DD
rising
–
5.7
2.7
100
–
–
1
Typical data are for initial design estimations only, and assume optimum manufacturing and application conditions. Performance may vary
for individual units, within the specified maximum and minimum limits.
2
Negative current is defined as coming out of (sourcing from) the specified device pin.
3
err = (I
I
TripMAX
.
I
Trip
– I
Prog
)
⁄
I
Prog
, where I
Prog
= %I
TripMAX
×
Allegro MicroSystems, Inc.
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
5
ALLEGRO [ ALLEGRO MICROSYSTEMS ]
