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STRG6632 参数 Datasheet PDF下载

STRG6632图片预览
型号: STRG6632
PDF下载: 下载PDF文件 查看货源
内容描述: OFF- LINE的准谐振反激式开关稳压器 [OFF-LINE QUASI-RESONANT FLYBACK SWITCHING REGULATOR]
分类和应用: 稳压器开关
文件页数/大小: 8 页 / 175 K
品牌: ALLEGRO [ ALLEGRO MICROSYSTEMS ]
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STR-G6651
Data Sheet
OFF-LINE QUASI-RESONANT
FLYBACK SWITCHING REGULATOR
The STR-G6651 is specifically designed to satisfy the requirements
for increased integration and reliability in off-line quasi-resonant flyback
converters. This device incorporates the primary control and drive
circuit with a discrete avalanche-rated power MOSFET.
FDBK
OSC.
LATCH
UVLO
OVP
TSD
GROUND
OVERCURRENT
& FEEDBACK
SOURCE
SUPPLY
DRAIN
Cycle-by-cycle current limiting, under-voltage lockout with hyster-
esis, over-voltage protection, and thermal shutdown protects the power
supply during the normal overload and fault conditions. Over-voltage
protection and thermal shutdown are latched after a short delay. The
latch may be reset by cycling the input supply. Low-current startup and
a low-power standby mode selected from the secondary circuit completes
a comprehensive suite of features. The device is provided in a five-pin
over-molded TO-220 style package, affording dielectric isolation without
compromising thermal characteristics. Two lead forms are available
(with and without the suffix ‘-LF’) to accommodate printed wiring board
layout or mechanical constraints.
Proven in substantial volumes, the STR-G6651 is a robust low-risk
solution for off-line power supplies particularly where management of
EMI at the source is a significant element of the system design.
28102.9A
2
1
3
4
V
IN
OCP
Dwg. PK-011
ABSOLUTE MAXIMUM RATINGS
at T
A
= +25
°
C
Control Supply Voltage, V
IN
. . . . . . .
35 V
Drain-Source Voltage, V
DS
. . . . . . . .
650 V
Drain Current, I
D
continuous . . . . . . . . . . . . . . . . . .
2.7 A
single-pulse, t
w
1 ms . . . . . . . .
7.2 A
Avalanche Energy, E
AS
single-pulse . . . . . . . . . . . . . . .
158 mJ
Over-Current Protection Voltage Range,
V
OCP
. . . . . . . . . . . . . . .
-0.3 V to +6 V
Insulation RMS Voltage,
V
WM(RMS)
. . . . . . . . . . . . . . . . . .
2000 V
Package Power Dissipation, P
D
control (V
IN
x I
IN(ON)
) . . . . . . . . .
0.8 W
total . . . . . . . . . . . . . . . . . . .
See Graph
FET Channel Temperature, T
J
. . .
+150
°
C
Internal Frame Temperature, T
F
. .
+125
°
C
Operating Temperature Range,
T
A
. . . . . . . . . . . . . . .
-20
°
C to +125
°
C
Storage Temperature Range,
T
S
. . . . . . . . . . . . . . .
-40
°
C to +125
°
C
5
FEATURES
I
Quasi-Resonant Operation
I
Output Power to 66 W
I
Low-Loss, Pulse-Ratio-Control Standby Mode
I
Temperature-Compensated Pulse-by-Pulse Over-Current Protection
I
Latched Over-Voltage and Thermal Protection
I
Under-Voltage Lockout with Hysteresis
I
Active Low-Pass Filter for Enhanced Light-Load Stability
I
Switched Attenuation of Leading-Edge Current-Sensing Signal
I
Regulated Soft Gate Drive
I
Adjustable Switching Speed for EMI Control
I
Overmolded Five-Pin Package
Always order by complete part number:
STR-G6651
.