AMG-PI004
H-Bridge/Full Bridge Array of P and N channel MOSFETs
1. Functional Description of the AMG-PI004
The AMG-PI004 is built by utilizing one of the latest state-of-the-art trench technologies to
achieve ultra low resistance RDS(on) for the power MOSFETs. The complementary H-bridge
consists of 2 PMOS/NMOS transistor pairs. Based on this trench-technology the input gate
capacity is very low, so that high switching frequencies are possible thus making it ideal for
use in different applications. The DFN8 package is footprint compatible with the SOP8
package, making the H-bridge an ideal choice for wide spread off high efficiency applications
for motor driving, lighting, and power management.
2. Features
Supply voltage 5VDC...60VDC
Complementary N/P-MOS H-Bridge
60V/5.1A/ RDS(on) =34mΩ(typ)
-60V/-4.2A/ RDS(on) =54mΩ(typ)
Low QG of 9.86/12.6nC for PMOS/NMOS
Low CISS of 1447pF/1378pF for PMOS/NMOS
Low voltage gate drive VGS = ±20V
RoHS compliant and green product
Temperature Range -55C…+150C
DFN8L (5mm x 6mm x 0.75 mm)
3. Application
The AMG-PI004 is suitable for motor driving, lighting and power management.
AMG-PI004
Revision: B
06.11.12
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