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AA035P3-00 参数 Datasheet PDF下载

AA035P3-00图片预览
型号: AA035P3-00
PDF下载: 下载PDF文件 查看货源
内容描述: 31-35 GHz的砷化镓MMIC驱动放大器 [31-35 GHz GaAs MMIC Driver Amplifier]
分类和应用: 放大器射频微波驱动
文件页数/大小: 2 页 / 70 K
品牌: ALPHA [ ALPHA INDUSTRIES ]
 浏览型号AA035P3-00的Datasheet PDF文件第2页  
31–35 GHz GaAs MMIC
Driver Amplifier
AA035P3-00
Features
s
Single Bias Supply Operation (5 V)
s
19 dB Typical Small Signal Gain
s
17 dBm Typical P
1 dB
Output Power
at 35 GHz
s
0.25
µm
Ti/Pd/Au Gates
s
100% On-Wafer RF and DC Testing
0.000
3.810
1.905
1.250
Chip Outline
1.554
2.471
3.386
s
100% Visual Inspection to MIL-STD-883
MT 2010
0.000
Description
Alpha’s three-stage reactively-matched Ka band GaAs
MMIC driver amplifier has a typical P
1 dB
of 17 dBm with
18 dB associated gain at 35 GHz. The chip uses Alpha’s
proven 0.25
µm
MESFET technology, which is based upon
MBE layers and electron beam lithography for the highest
uniformity and repeatability. The FETs employ surface
passivation to ensure a rugged, reliable part with
through-substrate via holes and gold-based backside
metallization to facilitate solder or epoxy die attach
processes. The amplifier is a self-bias design requiring a
single positive drain bias to one of any three bonding sites.
All chips are screened for S-parameters prior to shipment
for guaranteed performance. A broad range of
applications exist in both the high reliability and
commercial areas where high gain and power are
required.
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Absolute Maximum Ratings
Characteristic
Operating Temperature (T
C
)
Storage Temperature (T
ST
)
Bias Voltage (V
D
)
Power In (P
IN
)
Junction Temperature (T
J
)
Value
-55°C to +90°C
-65°C to +150°C
7 V
DC
19 dBm
175°C
Electrical Specifications at 25°C (V
DS
= 5 V)
Parameter
Drain Current
Small Signal Gain
Noise
Figure
1
Input Return Loss
Output Return Loss
Output Power at 1 dB Gain Compression
Saturated Output Power
Thermal Resistance
2
1. Not measured on a 100% basis.
2. Calculated value based on measurement of discrete FET.
3. Typical represents the median parameter value across the specified
frequency range for the median chip.
Condition
F= 31–35 GHz
F= 35 GHz
F= 31–35 GHz
F= 31–35 GHz
F= 35 GHz
F= 35 GHz
Symbol
I
DS
G
NF
RL
I
RL
O
P
1 dB
P
SAT
Θ
JC
Min.
15
Typ.
3
275
19
10.5
-14
-16
Max.
350
Unit
mA
dB
dB
-10
-10
dB
dB
dBm
dBm
°C/W
15
16
17
19
66
Alpha Industries, Inc.
[781] 935-5150
Fax
[617] 824-4579
Email
sales@alphaind.com
www.alphaind.com
Specifications subject to change without notice. 1/01A
1