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AA038P5-00 参数 Datasheet PDF下载

AA038P5-00图片预览
型号: AA038P5-00
PDF下载: 下载PDF文件 查看货源
内容描述: 37-39 GHz的砷化镓MMIC功率放大器 [37-39 GHz GaAs MMIC Power Amplifier]
分类和应用: 放大器射频微波功率放大器
文件页数/大小: 2 页 / 132 K
品牌: ALPHA [ ALPHA INDUSTRIES ]
 浏览型号AA038P5-00的Datasheet PDF文件第2页  
37–39 GHz GaAs MMIC
Power Amplifier
AA038P5-00
Features
s
Single Bias Supply Operation (5.5 V)
s
18 dB Typical Small Signal Gain
s
19 dBm Typical P
1 dB
Output Power
at 39 GHz
s
0.25
µm
Ti/Pd/Au Gates
0.000
1.342
2.166
2.989
0.470
0.000
3.400
0.112
Chip Outline
1.700
1.230
1.588
s
100% On-Wafer RF and DC Testing
s
100% Visual Inspection to MIL-STD-883
MT 2010
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Description
Alpha’s three-stage reactively-matched Ka band GaAs
MMIC amplifier has a typical P
1 dB
of 19 dBm with 17 dB
associated gain over the band 37–39 GHz. The chip uses
Alpha’s proven 0.25
µm
MESFET technology, and is
based upon MBE layers and electron beam lithography
for the highest uniformity and repeatability. The FETs
employ surface passivation to ensure a rugged, reliable
part with through-substrate via holes and gold-based
backside metallization to facilitate an epoxy die attach
process. All chips are screened for small signal
S-parameters and power characteristics prior to shipment
for guaranteed performance. A broad range of
applications exist in both the high reliability and
commercial areas where power and gain are required.
Absolute Maximum Ratings
Characteristic
Operating Temperature (T
C
)
Storage Temperature (T
ST
)
Bias Voltage (V
D
)
Power In (P
IN
)
Junction Temperature (T
J
)
Value
-55°C to +90°C
-65°C to +150°C
7 V
DC
19 dBm
175°C
Electrical Specifications at 25°C (V
DS
= 5.5 V)
Parameter
Drain Current (at Saturation)
Small Signal Gain
Input Return Loss
Output Return Loss
Output Power at 1 dB Gain Compression
Saturated Output Power
Gain at Saturation
Thermal
Resistance
1
F = 37–39 GHz
F = 37–39 GHz
F = 37–39 GHz
F = 39 GHz
F = 39 GHz
F = 39 GHz
Condition
Symbol
I
DS
G
RL
I
RL
O
P
1 dB
P
SAT
G
SAT
Θ
JC
16
19
16
Min.
Typ.
200
18
-13
-20
19
21
15
51
-10
-10
Max.
370
Unit
mA
dB
dB
dB
dBm
dBm
dB
°C/W
1. Calculated value based on measurement of discrete FET.
Alpha Industries, Inc.
[781] 935-5150
Fax
[617] 824-4579
Email
sales@alphaind.com
www.alphaind.com
Specifications subject to change without notice. 8/00A
1