GaAs IC Control FET Series
DC–2.5 GHz
AF002C1-39, AF002C4-39
Features
s
Low Cost SOT-23 Package
s
Series or Shunt Configuration
s
Low DC Current Drain
s
Ideal Switch Building Blocks
s
Pin Diode Replacements
s
High Power Antenna Switches
SOT-23
0.120 (3.05 mm)
0.110 (2.79 mm)
3
0.018 (0.45 mm)
0.015 (0.38 mm)
0.055 (1.40 mm)
0.047 (1.19 mm)
0.024 (0.61 mm)
0.018 (0.45 mm)
0.080 (2.03 mm)
0.070 (1.78 mm)
0.007 (0.18 mm)
0.003 (0.08 mm)
1
2
0.104 (2.64 mm)
0.083 (2.10 mm)
0.040 (1.02 mm)
0.037 (0.94 mm)
Description
This group of GaAs control FETs can be used in both
series and shunt configurations. They incorporate on-chip
circuitry that eliminates the need for extra bias
components and minimizes power drain to typically 25 µW.
These features make the device ideal replacements for
PIN diodes, where low DC drain is critical.
Isolation performance degrades at higher frequencies due
to package parasitics. They can be tuned out in narrow
band applications as shown in the circuit examples on the
following pages.
0.027 (0.69 mm) REF.
0.004 (0.10 mm)
0.0005 (0.01 mm)
0.045
(1.14 mm)
0.035
(0.89 mm)
Electrical Specifications at 25°C (0, -5 V)
Part Number
1
AF002C1-39
Frequency
2
(GHz)
DC–0.5 GHz
DC–1.0 GHz
DC–2.5 GHz
AF002C4-39
DC–0.5 GHz
DC–1.0 GHz
DC–2.5 GHz
Ω
R
ON
(Ω
)
3
Typ.
6.4
6.4
6.4
0.8
0.8
0.8
Max.
9.0
9.0
9.0
1.1
1.1
1.1
Insertion Loss (dB)
4,5
Series
0.50
0.60
0.70
0.20
0.25
0.30
Shunt
0.10
0.15
0.20
0.15
0.25
2.00
C
OFF
(pF)
6
Typ.
0.13
0.13
0.13
1.10
1.10
1.10
Max.
0.25
0.25
0.25
1.50
1.50
1.5
Isolation (db)
5
Series
25
17
13
11
6
3
Shunt
12
8
3
15
9
4
P
-1 dB
(W)
Typ.
0.5
1.0
1.0
6
10
10
Operating Characteristics at 25°C (0, -5 V)
Parameter
Switching Characteristics
Control Voltages
Condition
Rise, Fall (10/90% or 90/10% RF)
On, Off (50% CTL to 90/10% RF)
V
Low
= 0 to -0.2 V @ 20 µA Max.
V
High
= -5 V @ 50 µA to -9 V @ 200 µA Max.
Frequency
Min.
Typ.
6
12
Max.
Unit
ns
ns
1. All measurements made in a 50
Ω
system, unless otherwise specified.
2. DC = 300 kHz.
3. R
ON
- resistance in
Ω
in low impedance state when “0” V is applied to Gate (G).
4. Insertion loss changes by 0.003 dB/°C.
5. Insertion loss and isolation typical values.
6. C
OFF
- capacitance (pF) in high impedance state when -5 V is applied to Gate (G).
Alpha Industries, Inc.
[781] 935-5150
•
Fax
[617] 824-4579
•
Email
sales@alphaind.com
•
www.alphaind.com
Specifications subject to change without notice. 3/99A
1
ALPHA [ ALPHA INDUSTRIES ]
