Ka Band Power GaAs MESFET Chip
AFM04P2-000
Features
I
21 dBm Output Power @ 18 GHz
I
High Associated Gain, 9 dB @ 18 GHz
I
High Power Added Efficiency, 25%
I
Broadband Operation, DC–40 GHz
I
0.25
µm
Ti/Pd/Au Gates
I
Passivated Surface
I
Through-Substrate Via Hole Grounding
0.327 mm
0.655 mm
Chip thickness = 0.1 mm.
Drain
0.110 mm
0.395 mm
Gate
0.110 mm
Description
The AFM04P2-000 is a high performance power GaAs
MESFET chip having a gate length of 0.25
µm
and a
total gate periphery of 400
µm.
The device has
excellent gain and power performance through 40 GHz,
making it suitable for a wide range of commercial and
military applications in oscillator and amplifier circuits. It
employs Ti/Pd/Au gate metallization and surface
passivation to ensure a rugged, reliable part. Through-
substrate via holes are incorporated into the chip to
facilitate low inductance grounding of the source for
improved high frequency and high gain performance.
Absolute Maximum Ratings
Characteristic
Drain to Source Voltage (V
DS
)
Gate to Source Voltage (V
GS
)
Drain Current (I
DS
)
Gate Current (I
GS
)
Total Power Dissipation (P
T
)
Storage Temperature (T
ST
)
Channel Temperature (T
CH
)
Value
6V
-4 V
I
DSS
1 mA
700 mW
-65 to +150°C
175°C
Electrical Specifications at 25°C
Parameter
Saturated Drain Current (I
DSS
)
Transconductance (gm)
Pinch-off Voltage (V
P
)
Gate to Drain
Breakdown Voltage (V
bgd
)
Output Power at 1 dB
Compression (P
1 dB
)
Gain at 1 dB Compression (G
1 dB
)
Power Added Efficiency (ηadd)
Output Power at 1 dB
Compression (P
1 dB
)
Gain at 1 dB Compression (G
1 dB
)
Power Added Efficiency (ηadd)
Thermal Resistance (Θ
JC
)
T
BASE
= 25°C
V
DS
= 5 V, I
DS
= 70 mA, F = 30 GHz
V
DS
= 5 V, I
DS
= 70 mA, F = 18 GHz
Test Conditions
V
DS
= 2 V, V
GS
= 0 V
V
DS
= 5 V, I
DS
= 1 mA
I
GD
= -400
µA
Min.
90.0
60.0
1.0
8.0
Typ.
140.0
80.0
3.0
12.0
21.0
9.0
25.0
20.0
5.0
15.0
250.0
5.0
Max.
190.0
Unit
mA
mS
-V
-V
dBm
dB
%
dBm
dB
%
°C/W
Alpha Industries, Inc.
[781] 935-5150
•
Fax
[617] 824-4579
•
Email
sales@alphaind.com
•
www.alphaind.com
Specifications subject to change without notice. 12/99A
1