Low Noise/Medium Power
GaAs MESFET Chip
AFM04P3-000
Features
s
21 dBm Output Power @ 18 GHz
s
High Associated Gain, 9 dB @ 18 GHz
s
High Power Added Efficiency, 25%
s
Broadband Operation, DC–26 GHz
s
0.25
µm
Ti/Pd/Au Gates
s
Passivated Surface
Chip Layout
Description
The AFM04P3-000 is a high performance power GaAs
MESFET chip having a gate length of 0.25
µm
and a total
gate periphery of 400
µm.
The device has excellent gain
and power performance through 26 GHz, making it
suitable for a wide range of commercial and military
applications in oscillator and amplifier circuits. The device
employs Ti/Pd/Au gate metallization and surface
passivation to ensure a rugged, reliable part.
Absolute Maximum Ratings
Characteristic
Drain to Source Voltage (V
DS
)
Gate to Source Voltage (V
GS
)
Drain Current (I
DS
)
Gate Current (I
GS
)
Total Power Dissipation (P
T
)
Storage Temperature (T
ST
)
Channel Temperature (T
CH
)
Value
6V
-4 V
I
DSS
1 mA
700 mW
-65 to +150°C
175°C
Electrical Specifications at 25°C
Parameter
Saturated Drain Current (I
DSS
)
Transconductance (gm)
Pinch-off Voltage (V
P
)
Gate to Drain
Breakdown Voltage (V
bgd
)
Noise Figure (NF)
Associated Gain (G
A
)
Output Power at 1 dB
Compression (P
1 dB
)
Gain at 1 dB Compression (G
1 dB
)
Power Added Efficiency (ηadd)
Thermal Resistance (Θ
JC
)
T
BASE
= 25°C
Test Conditions
V
DS
= 2 V, V
GS
= 0 V
V
DS
= 5 V, I
DS
= 1 mA
I
GD
= -400
µA
V
DS
= 2 V, I
DS
= 25 mA, F = 4 GHz
Min.
90.0
60.0
1.0
8.0
Typ.
140.0
80.0
3.0
12.0
0.6
13.8
21.0
V
DS
= 5 V, I
DS
= 70 mA, F = 18 GHz
9.0
25.0
250.0
5.0
Max.
190.0
Unit
mA
mS
-V
-V
dB
dB
dBm
dB
%
°C/W
Alpha Industries, Inc.
[781] 935-5150
•
Fax
[617] 824-4579
•
Email
sales@alphaind.com
•
www.alphaind.com
Specifications subject to change without notice. 6/99A
1
ALPHA [ ALPHA INDUSTRIES ]
