Low Noise/Medium Power
GaAs MESFET Chips
AFM04P3-212, AFM04P3-213
Features
s
Low Noise Figure, 0.6 dB @ 4 GHz
s
20 dBm Output Power @ 18 GHz
s
High Associated Gain, 13 dB @ 4 GHz
s
High Power Added Efficiency, 25%
s
Broadband Operation, DC–26 GHz
s
Available in Tape and Reel Packaging
Source
212
Gate
Drain
Source
Gate
Source
Drain
213
Source
Description
The AFM04P3-212, 213 are high performance power
GaAs MESFET chips having a gate length of 0.25
µm
and
a total gate periphery of 400
µm.
These devices have
excellent gain and power performance through 26 GHz,
making them suitable for a wide range of commercial and
military applications in oscillator and amplifier circuits. They
also have excellent noise performance and can be used
in the first and second stage of low noise amplifier design.
The AFM04P3 employs Ti/Pd/Au gate metallization and
surface passivation to ensure a rugged, reliable part.
Absolute Maximum Ratings
Characteristic
Drain to Source Voltage (V
DS
)
Gate to Source Voltage (V
GS
)
Drain Current (I
DS
)
Gate Current (I
GS
)
Total Power Dissipation (P
T
)
Storage Temperature (T
ST
)
Channel Temperature (T
CH
)
Value
6V
-4 V
I
DSS
1 mA
700 mW
-65 to +150°C
175°C
Electrical Specifications at 25°C
Parameter
Saturated Drain Current (I
DSS
)
Transconductance (gm)
Pinch-Off Voltage (V
P
)
Gate to Drain Breakdown
Voltage (V
bgd
)
Noise Figure (NF)
Associated Gain (G
A
)
Output Power at 1 dB
Compression (P
1 dB
)
Gain at 1 dB Compression (G
1 dB
)
Power Added Efficiency (ηadd)
Test Conditions
V
DS
= 2 V, V
GS
= 0 V
V
DS
= 5 V, I
DS
= 1 mA
I
GD
= -400
µA
Min.
90.0
60.0
1.0
8.0
Typ.
140.0
80.0
3.0
12.0
0.6
13.8
20.0
V
DS
= 5 V, I
DS
= 70 mA, F = 18 GHz
9.0
25.0
5.0
Max.
190.0
Unit
mA
mS
-V
-V
dB
dB
dBm
dB
%
V
DS
= 2 V, I
DS
= 25 mA, F = 4 GHz
Alpha Industries, Inc.
[781] 935-5150
•
Fax
[617] 824-4579
•
Email
sales@alphaind.com
•
www.alphaind.com
Specifications subject to change without notice. 6/99A
1
ALPHA [ ALPHA INDUSTRIES ]
