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AFM08P2-000 参数 Datasheet PDF下载

AFM08P2-000图片预览
型号: AFM08P2-000
PDF下载: 下载PDF文件 查看货源
内容描述: Ka波段功率GaAs MESFET芯片 [Ka Band Power GaAs MESFET Chip]
分类和应用: 晶体晶体管放大器
文件页数/大小: 3 页 / 23 K
品牌: ALPHA [ ALPHA INDUSTRIES ]
 浏览型号AFM08P2-000的Datasheet PDF文件第2页浏览型号AFM08P2-000的Datasheet PDF文件第3页  
Ka Band Power GaAs MESFET Chip
AFM08P2-000
Features
s
24 dBm Output Power @ 18 GHz
s
High Power Added Efficiency, 20%
s
Broadband Operation, DC–40 GHz
s
0.25
µm
Ti/Pd/Au Gates
s
Passivated Surface
s
Through-Substrate Via Hole Grounding
Chip thickness = 0.1 mm.
Drain
0.110 mm
0.395 mm
s
High Associated Gain, 8.5 dB @ 18 GHz
Gate
0.327 mm
0.655 mm
0.110 mm
Description
The AFM08P2-000 is a high performance power GaAs
MESFET chip having a gate length of 0.25
µm
and a total
gate periphery of 800
µm.
The device has excellent gain
and power performance through 40 GHz, making it
suitable for a wide range of commercial and military
applications in oscillator and amplifier circuits. It employs
Ti/Pd/Au gate metallization and surface passivation to
ensure a rugged, reliable part. Through-substrate via holes
are incorporated into the chip to facilitate low inductance
grounding of the source for improved high frequency and
high gain performance.
Absolute Maximum Ratings
Characteristic
Drain to Source Voltage (V
DS
)
Gate to Source Voltage (V
GS
)
Drain Current (I
DS
)
Gate Current (I
GS
)
Total Power Dissipation (P
T
)
Storage Temperature (T
ST
)
Channel Temperature (T
CH
)
Value
6V
-4 V
I
DSS
2 mA
1.4 W
-65 to +150°C
175°C
Electrical Specifications at 25°C
Parameter
Saturated Drain Current (I
DSS
)
Transconductance (gm)
Pinch-off Voltage (V
P
)
Gate to Drain
Breakdown Voltage (V
bgd
)
Output Power at 1 dB
Compression (P
1 dB
)
Gain at 1 dB Compression (G
1 dB
)
Power Added Efficiency (ηadd)
Output Power at 1 dB
Compression (P
1 dB
)
Gain at 1 dB Compression (G
1 dB
)
Power Added Efficiency (ηadd)
Thermal Resistance (Θ
JC
)
V
DS
= 5 V, I
DS
= 140 mA, F = 30 GHz
T
BASE
= 25°C
V
DS
= 5 V, I
DS
= 140 mA, F = 18 GHz
Test Conditions
V
DS
= 2 V, V
GS
= 0 V
V
DS
= 5 V, I
DS
= 2.0 mA
I
GD
= 800
µA
Min.
175.0
120.0
1.0
8.0
Typ.
265.0
160.0
3.0
12.0
24.0
8.5
20.0
23.0
4.5
10.0
120.0
5.0
Max.
360.0
Unit
mA
mS
-V
-V
dBm
dB
%
dBm
dB
%
°C/W
Alpha Industries, Inc.
[781] 935-5150
Fax
[617] 824-4579
Email
sales@alphaind.com
www.alphaind.com
Specifications subject to change without notice. 6/99A
1