General Purpose Packaged PHEMT Chips
AFP02N8-212, AFP02N8-213
Features
s
Low Noise Figure, 1.55 dB @ 4 GHz
s
High Associated Gain, 13 dB @ 4 GHz
s
High MAG, > 15 dB @ 4 GHz
s
0.7
µm
Ti/Pd/Au Gates
s
Passivated Surface
s
Low Cost Metal Ceramic Package
s
Available with Two Lead Lengths
s
Available in Tape and Reel Packaging
Source
212
Gate
Drain
Drain
Source
Gate
Source
213
Source
Absolute Maximum Ratings
Characteristic
Value
6V
-3 V
I
DSS
10
µA
300 mW
-65 to +150°C
175°C
Drain to Source Voltage (V
DS
)
Gate to Source Voltage (V
GS
)
Drain Current (I
DS
)
Gate Current (I
GS
)
Total Power Dissipation (P
T
)
Storage Temperature (T
ST
)
Channel Temperature (T
CH
)
Description
The AFP02N8-212, 213 are general purpose packaged
PHEMT chips that have excellent gain and noise
performance through X band, making them suitable for a
wide range of commercial applications. The devices
employ 0.7
µm
Ti/Pd/Au gates and surface passivation to
ensure a rugged, reliable part. Available in metal ceramic
packages with a choice of two lead lengths. The
components are also available in tape and reel and are
ready for automatic insertion equipment.
Electrical Specifications at 25°C
Parameter
Saturated Drain Current (I
DSS
)
Transconductance (gm)
Pinch-off Voltage (V
P
)
Gate to Source
Breakdown Voltage (V
bgs
)
Noise Figure (NF)
Associated Gain (G
A
)
Test Conditions
V
DS
= 2 V, V
GS
= 0 V
V
DS
= 2 V, I
DS
= 15 mA
V
DS
= 2 V, I
DS
= 0.3 mA
I
GS
= -200
µA
Min.
25.0
30.0
-0.4
-6.0
Typ.
55.0
45.0
-1.2
8.0
1.55
12.0
13.2
2.0
-2.0
Max.
90.0
Unit
mA
mS
V
V
dB
dB
V
DS
= 2 V, I
DS
= 15 mA, F = 4 GHz
Alpha Industries, Inc.
[781] 935-5150
•
Fax
[617] 824-4579
•
Email
sales@alphaind.com
•
www.alphaind.com
Specifications subject to change without notice. 6/99A
1
ALPHA [ ALPHA INDUSTRIES ]
