26–33 GHz GaAs MMIC
Double Balanced Down Converter Mixer
AM028D1-00
Features
Chip Outline
2.155
29-4-9 DEDDA CIMHO
I
Low Conversion Loss, 6.5 dB
I
Insensitive to LO Power Variations
I
High LO to RF Isolation, 27 dB
I
No DC Bias Required
OHMIC
ADDED 9-4-92
1.582
1.086
Description
Alpha’s double balanced GaAs Schottky diode mixer has
a typical conversion loss of 6.5 dB at an LO power level
as low as 11 dBm over the band 26–33 GHz. The chip
uses Alpha’s proven Schottky diode technology, and is
based upon MBE layers for the highest uniformity and
repeatability. The diodes employ surface passivation to
ensure a rugged, reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
an epoxy die attach process. All chips are screened for
DC diode parameters and lot samples are RF measured
to guarantee performance.
50
OHMS
SMHO 05
0.591
0.085
0.000
0.000
0.085
1.166
2.320
Dimensions indicated in mm.
All pads are
≥
0.07 mm wide.
Chip thickness = 0.1 mm.
Absolute Maximum Ratings
Characteristic
Operating Temperature
Storage Temperature
Total Input Power (RF + LO)
Value
-55°C to +125°C
-65°C to +150°C
23 dBm
Electrical Specifications at 25°C
Parameter
RF and LO Frequency Range
IF Frequency Range
LO Power Level
Conversion
LO to RF
Loss
1
RF and LO Return Loss
1
Isolation
1
Point
1
LO to IF Isolation
1
RF Input 1 dB Compression
Two Parallel Diode Series Resistance
1. Not measured on a 100% basis.
2. Typical represents the median parameter value across the specified
frequency range for the median chip.
Symbol
F
RF
, F
LO
F
IF
P
LO
L
C
RL
RF
, RL
LO
ISO
LO-RF
ISO
LO-IF
P
1 dB
Min.
Typ.
2
26–33
0–2
11–21
6.5
20
27
30
12
Max.
Unit
GHz
GHz
dBm
dB
dB
dB
dB
dBm
1.5
Ω
Alpha Industries, Inc.
[781] 935-5150
•
Fax
[617] 824-4579
•
Email
sales@alphaind.com
•
www.alphaind.com
Specifications subject to change without notice. 2/00A
1
ALPHA [ ALPHA INDUSTRIES ]
