32–37 GHz GaAs MMIC
Ring Hybrid Mixer
AM035N4-00
Features
Chip Outline
2.800
2.471
I
Low Conversion Loss, 6.0 dB
I
Low LO Power Requirement, 9 dBm
I
High LO to RF Isolation, 28 dB
I
No DC Bias Required
2.027
Description
Alpha’s ring hybrid GaAs Schottky diode mixer has a
typical conversion loss of 6.0 dB at an LO power level as
low as 9 dBm over the band 32–37 GHz. The chip uses
Alpha’s proven Schottky diode technology, and is based
upon MBE layers for the highest uniformity and
repeatability. The diodes employ surface passivation to
ensure a rugged, reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
an epoxy die attach process. All chips are screened for
DC diode parameters and lot samples are RF measured
to guarantee performance.
0.541
0.000
0.000
3.195
Dimensions indicated in mm.
All pads are
≥
0.07 mm wide.
Chip thickness = 0.1 mm.
Absolute Maximum Ratings
Characteristic
Operating Temperature
Storage Temperature
Total Input Power (RF + LO)
Value
-55°C to +125°C
-65°C to +150°C
20 dBm
Electrical Specifications at 25°C
Parameter
RF and LO Frequency Range
IF Frequency Range
LO Power Level
Conversion Loss
1
RF and LO Return Loss
1
LO to RF Isolation
1
LO to IF Isolation
1
RF Input 1 dB Compression Point
1
Individual Diode Series Resistance
1. Not measured on a 100% basis.
2. Typical represents the median parameter value across the specified
frequency range for the median chip.
RL
RF
, RL
LO
ISO
LO-RF
ISO
LO-IF
P
1 dB
R
S
Alpha Industries, Inc.
[781] 935-5150
•
Fax
[617] 824-4579
•
Email
sales@alphaind.com
•
www.alphaind.com
Specifications subject to change without notice. 2/00A
NDS
UM O
MS
BE
OID
XU
FO
R
A
S
K
A
M
T
E
Symbol
F
RF
, F
LO
F
IF
P
LO
L
C
Min.
Typ.
2
32–37
0–3
9–19
6
9
28
35
10
Max.
Unit
GHz
GHz
dBm
dB
dB
dB
dB
dBm
4.0
Ω
1
ALPHA [ ALPHA INDUSTRIES ]
