33–43 GHz GaAs MMIC Single
Balanced Down Converter Mixer
AM038S1-00
Features
Chip Outline
1.435
29-4-9 DEDDA CIMHO
OHMIC
ADDED 9-4-92
I
Low Conversion Loss, 6.5 dB
I
Low LO Power Requirement, 6 dBm
I
Wide IF Bandwidth, 0–5 GHz
I
No DC Bias Required
1.102
1.121
Description
Alpha’s single balanced GaAs Schottky diode mixer has
a typical conversion loss of 6.5 dB at an LO power level
as low as 6.5 dBm over the band 33–43 GHz. The chip
uses Alpha’s proven Schottky diode technology, and is
based upon MBE layers for the highest uniformity and
repeatability. The diodes employ surface passivation to
ensure a rugged, reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
an epoxy die attach process. All chips are screened for
DC diode parameters and lot samples are RF measured
to guarantee performance.
0.000
0.000
OHMIC
ADDED 9-4-92
0.623
Dimensions indicated in mm.
All pads are
≥
0.07 mm wide.
Chip thickness = 0.1 mm.
Absolute Maximum Ratings
Characteristic
Operating Temperature
Storage Temperature
Total Input Power (RF + LO)
Value
-55°C to +125°C
-65°C to +150°C
20 dBm
Electrical Specifications at 25°C
Parameter
RF and LO Frequency Range
IF Frequency Range
LO Power Level
Conversion
LO to RF
Loss
1
RF and LO Return Loss
1
Isolation
1
LO to IF Isolation
1
RF Input 1 dB Compression Point
1
Individual Diode Series Resistance
1. Not measured on a 100% basis.
2. Typical represents the median parameter value across the specified
frequency range for the median chip.
Symbol
F
RF
, F
LO
F
IF
P
LO
L
C
RL
RF
, RL
LO
ISO
LO-RF
ISO
LO-IF
P
1 dB
R
S
Min.
Typ.
2
33–43
0–5
6–18
6.5
25
15
45
5
Max.
1.445
Unit
GHz
GHz
dBm
dB
dB
dB
dB
dBm
3.3
Ω
Alpha Industries, Inc.
[781] 935-5150
•
Fax
[617] 824-4579
•
Email
sales@alphaind.com
•
www.alphaind.com
Specifications subject to change without notice. 2/00A
1
ALPHA [ ALPHA INDUSTRIES ]
