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AO4800 参数 Datasheet PDF下载

AO4800图片预览
型号: AO4800
PDF下载: 下载PDF文件 查看货源
内容描述: 双N沟道增强型场效应晶体管 [Dual N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 6 页 / 324 K
品牌: ALPHA [ ALPHA INDUSTRIES ]
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July 2001
AO4800
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4800 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in
buck converters.
Features
V
DS
(V) = 30V
I
D
= 6.9A
R
DS(ON)
< 27mΩ (V
GS
= 10V)
R
DS(ON)
< 32mΩ (V
GS
= 4.5V)
R
DS(ON)
< 50mΩ (V
GS
= 2.5V)
D1
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
D2
G1
S1
G2
S2
SOIC-8
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
T
A
=25°C
A
Current
T
A
=70°C
I
D
Pulsed Drain Current
B
Maximum
30
±12
6.9
5.8
40
2
1.44
-55 to 150
Units
V
V
A
I
DM
P
D
T
J
, T
STG
T
A
=25°C
T
A
=70°C
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
W
°C
Symbol
t
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
48
74
35
Max
62.5
110
40
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.