May 2003
AO7407
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO7407 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications.
Features
V
DS
(V) = -20V
I
D
= -1.2 A
R
DS(ON)
< 135mΩ (V
GS
= -4.5V)
R
DS(ON)
< 170mΩ (V
GS
= -2.5V)
R
DS(ON)
< 220mΩ (V
GS
= -1.8V)
SC-70
SOT 323
Top View
G
D
S
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
A
B
Maximum
-20
±8
-1.2
-1.0
-10
0.35
0.22
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
300
350
280
Max
360
425
320
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
ALPHA [ ALPHA INDUSTRIES ]
