Rev 2: Oct 2004
AOB420, AOB420L (Green Product)
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOB420 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate chargeand low
gate resistance. This device is ideally suited for use
as a high side switch in CPU core power conversion.
AOB420L (Green Product) is offered in a Lead Free
package.
Features
V
DS
(V) = 30V
I
D
= 110A
R
DS(ON)
< 6.5mΩ (V
GS
= 10V)
R
DS(ON)
< 10.0mΩ (V
GS
= 4.5V)
TO-263
D2-PAK
D
Top View
Drain Connected
to Tab
G
S
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
B,G
Pulsed Drain Current
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
T
C
=25°C
Power Dissipation
Power Dissipation
B
C
Maximum
30
±20
110
65
200
30
120
100
50
3.1
2
-55 to 175
Units
V
V
A
A
mJ
W
W
°C
T
C
=25°C
G
B
T
C
=100°C
I
D
I
DM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
A
Maximum Junction-to-Ambient
C
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
8.1
33
1
Max
12
40
1.5
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
ALPHA [ ALPHA INDUSTRIES ]
