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CDC7630-000 参数 Datasheet PDF下载

CDC7630-000图片预览
型号: CDC7630-000
PDF下载: 下载PDF文件 查看货源
内容描述: 硅肖特基二极管芯片 [Silicon Schottky Diode Chips]
分类和应用: 肖特基二极管
文件页数/大小: 3 页 / 299 K
品牌: ALPHA [ ALPHA INDUSTRIES ]
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Silicon Schottky Diode Chips
Features
I
For Detector and Mixer Applications
I
Low Capacitance for Usage Beyond 40 GHz
I
ZBD and Low Barrier Designs
I
P-Type and N-Type Junctions
I
Large Bond Pad Chip Design
Description
Alpha’s product line of silicon Schottky diode chips are
intended for use as detector and mixer devices in hybrid
integrated circuits at frequencies from below 100 MHz to
higher than 40 GHz. Alpha’s “Universal Chip” design
features a 4 mil diameter bond pad that is offset from the
semiconductor junction preventing damage to the active
junction as a result of wire bonding.
As power-sensing detectors, these Schottky diode chips
all have the same voltage sensitivity so long as the output
video impedance is much higher than the video
resistance of the diode. Figure 1 shows the expected
detected voltage sensitivity as a function of RF source
impedance in an untuned circuit. Note that sensitivity is
substantially increased by transforming the source
impedance from 50
to higher values. Maximum
sensitivity occurs when the source impedance equals the
video resistance.
In a detector circuit operating at zero bias, depending on
the video load impedance, a ZBD device with R
V
less than
10 kΩ may be more sensitive than a low barrier diode with
R
V
greater than 100 kΩ. Applying forward bias reduces
the diode video resistance as shown in Figure 2. Lower
video resistance also increases the video bandwidth but
does not increase voltage sensitivity, as shown in
Figure 3. Biased Schottky diodes have better temperature
stability and also may be used in temperature
compensated detector circuits.
P-type Schottky diodes generate lower 1/F noise and are
preferred for Doppler mixers and biased detector
applications. The bond pad for the P-type Schottky diode
is the cathode. N-type Schottky diodes have lower parasitic
resistance, R
S
, and will perform with lower conversion loss
in mixer circuits. The bond pad for the N-type Schottky
diode is the anode.
Electrical Specifications at 25°C
Part Number
CDC7630-000
CDC7631-000
CDB7619-000
CDB7620-000
CDF7621-000
CDF7623-000
Barrier
ZBD
ZBD
Low
Low
Low
Low
Junction
Type
P
P
P
P
N
N
C
J
1
(pF)
Max.
0.25
0.15
0.10
0.15
0.10
0.30
R
T
2
(Ω)
Max.
30
80
40
30
20
10
V
F
@ 1 mA
(mV)
Min.–Max.
135–240
150–300
275–375
250–350
270–350
240–300
V
B
3
(V)
Min.
1
2
2
2
2
2
R
V
@ Zero Bias
(kΩ)
Typ.
5.5
7.2
735
537
680
245
Outline
Drawing
526-006
526-006
526-006
526-006
526-011
526-011
1. C
J
for low barrier diodes specified at 0 V. C
J
for ZBDs specified at 0.15 V
reverse bias.
2. R
T
is the slope resistance at 10 mA. R
S
Max. may be calculated from:
R
S
= R
T
- 2.6 x N.
3. V
B
for low barrier diodes is specified at 10
µA.
V
B
for ZBDs is specified
at 100
µA.
Alpha Industries, Inc.
[781] 935-5150
Fax
[617] 824-4579
Email
sales@alphaind.com
www.alphaind.com
Specifications subject to change without notice. 8/01A
1