#
®
$65<)343
89#45;.ð;#&026#)ODVK#((3520
)HDWXUHV
• Organization: 128K × 8 bits
• Sector Erase architecture
- Four 32K × 8 sectors
• Single 5.0±0.5V power supply for read/write operations
• High speed 120/150 ns address access time
• Low power consumption:
- 30 mA maximum read current
- 50 mA maximum program current
- 1.5 mA maximum standby current
- 1 mA maximum standby current (low power)
• 10,000 write/erase cycle endurance
• JEDEC standard write cycle commands
- protects data from accidental changes
• Program/erase cycle end signals:
- Data polling
- DQ6 toggle
• Low V
CC
write lock-out below 3.2V
• JEDEC standard packages and pinouts:
- 32-pin DIP
- 32-pin PLCC
- 32-pin TSOP
/RJLF#EORFN#GLDJUDP
DQ
0
~DQ
7
V
CC
V
SS
3LQ#DUUDQJHPHQW
32-pin
PDIP
Erase voltage
switch
Input/output
buffers
NC
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
CC
WE
NC*
A14
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
32-pin
PLCC
A12
A15
A16
NC
V
CC
WE
NC*
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
5
6
7
8
9
10
11
12
13
4
3
2
1
32
31
30
29
28
27
26
25
24
23
22
21
AS29F010
WE
State
control
Command
register
Program voltage
switch
Data
latch
AS29F010
CE
OE
Chip enable
Output enable
Logic
A14
A13
A8
A9
A11
OE
A10
CE
DQ7
Address latch
Low V
CC
detector
A
0
~A
16
Program/erase
pulse timer
Y-Decoder
Y-Gating
A11
A9
A8
A13
A14
NC
WE
V
CC
NC
A16
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32-pin
TSOP
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
V
SS
DQ2
DQ1
DQ0
A0
A1
A2
A3
DQ1
DQ2
V
SS
DQ3
DQ4
DQ5
DQ6
14
15
16
17
18
19
20
)/$6+
)/$6+
)/$6+
)/$6+
X-Decoder
1,048,576 bit
Cell matrix
AS29F010
6HOHFWLRQ#JXLGH
AS29F010-120
Maximum access time
Chip enable access time
Output enable access time
t
AA
t
CE
t
OE
120
120
50
AS29F010-150
150
150
50
Unit
ns
ns
ns
','#4407333:0$1#72:233
$//,$1&(#6(0,&21'8&725
4
Copyright ©1998 Alliance Semiconductor. All rights reserved.
ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
