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AS29F200B-90SC 参数 Datasheet PDF下载

AS29F200B-90SC图片预览
型号: AS29F200B-90SC
PDF下载: 下载PDF文件 查看货源
内容描述: 5V 256K ×8 / 128K ×8 CMOS FLASH EEPROM [5V 256K x 8/128K x 8 CMOS FLASH EEPROM]
分类和应用: 闪存存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 20 页 / 357 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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• Organization: 256K×8 or 128K×16
• Sector architecture
- One 16K; two 8K; one 32K; and three 64K byte sectors
- Boot code sector architecture—T (top) or B (bottom)
- Erase any combination of sectors or full chip
• Single 5.0±0.5V power supply for read/write operations
• Sector protection
• High speed 55/70/90/120 ns address access time
• Automated on-chip programming algorithm
- Automatically programs/verifies data at specified ad-
dress
• Automated on-chip erase algorith
- Automatically preprograms/erases chip or specified sec-
tors
• 10,000 write/erase cycle endurance
• Hardware RESET pin
- Resets internal state machine to read mode
• Low power consumption
- 20 mA typical read current
- 30 mA typical program current
- 300 µA typical standby current
- 1 µA typical standby current (RESET = 0)
• JEDEC standard software, packages and pinouts
- 48-pin TSOP
- 44-pin SO
• Detection of program/erase cycle completion
- DQ7 DATA polling
- DQ6 toggle bit
- RY/BY output
• Erase suspend/resume
- Supports reading data from a sector not being erased
• Low V
CC
write lock-out below 2.8V
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RY/BY
V
CC
V
SS
RESET
Program/erase
control
Command
register
CE
OE
A-1
Program voltage
generator
Chip enable
Output enable
Logic
STB
Data latch
Sector protect
switches
Erase voltage
generator
DQ0–DQ15
3LQ#DUUDQJHPHQW
48-pin TSOP
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE
RESET
NC
NC
RY/BY
NC
NC
A7
A6
A5
A4
A3
A2
A1
NC
RY/BY
NC
A7
A6
A5
A4
A3
A2
A1
A0
CE
V
SS
OE
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
DQ11
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
RESET
WE
A8
A9
A10
A11
A12
A13
A14
A15
A16
BYTE
V
SS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
V
CC
44-pin SO
Input/output
buffers
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
AS29F200
AS29F200
WE
BYTE
)/$6+
)/$6+
)/$6+
)/$6+
V
CC
detector
Timer
Address latch
STB
Y decoder
Y gating
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
X decoder
Cell matrix
A16
BYTE
V
SS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
V
CC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE
V
SS
CE
A0
A0–A16
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29F200-55
Maximum access time
Maximum chip enable access time
Maximum output enable access time
t
AA
t
CE
t
OE
55
55
25
29F200-70
70
70
30
29F200-90
90
90
35
29F200-120 Unit
120
120
50
ns
ns
ns
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Copyright ©1998 Alliance Semiconductor. All rights reserved.