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AS4C4M4F1-60 参数 Datasheet PDF下载

AS4C4M4F1-60图片预览
型号: AS4C4M4F1-60
PDF下载: 下载PDF文件 查看货源
内容描述: 5V 4M × 4 CMOS DRAM(快页模式) [5V 4M×4 CMOS DRAM (Fast Page mode)]
分类和应用: 动态存储器
文件页数/大小: 18 页 / 271 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS4C4M4F0
AS4C4M4F1
®
AC parameters common to all waveforms
-50
Symbol
t
RC
t
RP
t
RAS
t
CAS
t
RCD
t
RAD
t
RSH
t
CSH
t
CRP
t
ASR
t
RAH
t
T
t
REF
t
CP
t
RAL
t
ASC
t
CAH
Parameter
Random read or write cycle time
RAS precharge time
RAS pulse width
CAS pulse width
RAS to CAS delay time
RAS to column address delay time
CAS to RAS hold time
RAS to CAS hold time
CAS to RAS precharge time
Row address setup time
Row address hold time
Transition time (rise and fall)
Refresh period
CAS precharge time
Column address to RAS lead time
Column address setup time
Column address hold time
Min
80
30
50
8
15
12
10
40
5
0
8
1
8
25
0
8
Max
10K
10K
35
25
50
64
Min
100
40
60
10
15
12
10
50
5
0
10
1
10
30
0
10
-60
Max
10K
10K
43
30
50
64
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
ns
ns
ns
4,5
3
6
7
Notes
Read cycle
-50
Symbol
t
RAC
t
CAC
t
AA
t
RCS
t
RCH
t
RRH
Parameter
Access time from RAS
Access time from CAS
Access time from address
Read command setup time
Read command hold time to CAS
Read command hold time to RAS
Min
0
0
0
Max
50
12
25
Min
0
0
0
-60
Max
60
15
30
Unit
ns
ns
ns
ns
ns
ns
9
9
Notes
6
6,13
7,13
4/11/01; v.0.9
Alliance Semiconductor
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