AS4C4M4F0
AS4C4M4F1
®
5V 4M×4 CMOS DRAM (Fast Page mode)
Features
• Organization: 4,194,304 words × 4 bits
• High speed
- 50/60 ns RAS access time
- 25/30 ns column address access time
- 12/15 ns CAS access time
• TTL-compatible, three-state I/O
• JEDEC standard package
• Latch-up current
≥
200 mA
• ESD protection
≥
2000 mV
• Industrial and commercial temperature available
- 300 mil, 24/26-pin SOJ
- 300 mil, 24/26-pin TSOP
• Low power consumption
- Active: 908 mW max
- Standby: 5.5 mW max, CMOS I/O
• Fast page mode
• Refresh
- 4096 refresh cycles, 64 ms refresh interval for
AS4C4M4F0
- 2048 refresh cycles, 32 ms refresh interval for
AS4C4M4F1
- RAS-only or CAS-before-RAS refresh or self-refresh
Pin arrangement
SOJ
V
CC
I/O0
I/O1
WE
RAS
*NC/A11
A10
A0
A1
A2
A3
V
CC
1
2
3
4
5
6
8
9
10
11
12
13
26
25
24
23
22
21
19
18
17
16
15
14
GND
I/O3
I/O2
CAS
OE
A9
A8
A7
A6
A5
A4
GND
V
CC
I/O0
I/O1
WE
RAS
*NC/A11
A10
A0
A1
A2
A3
V
CC
1
2
3
4
5
6
8
9
10
11
12
13
Pin designation
TSOP
26
25
24
23
22
21
19
18
17
16
15
14
GND
I/O3
I/O2
CAS
OE
A9
A8
A7
A6
A5
A4
GND
Pin(s)
A0 to A11
RAS
CAS
WE
I/O0 to I/O3
OE
V
CC
GND
Description
Address inputs
Row address strobe
Column address strobe
Write enable
Input/output
Output enable
Power
Ground
AS4C4M4F0
*NC on 2K refresh version; A11 on 4K refresh version
Selection guide
Symbol
Maximum RAS access time
Maximum column address access time
Maximum CAS access time
Maximum output enable (OE) access time
Minimum read or write cycle time
Minimum fast page mode cycle time
Maximum operating current
Maximum CMOS standby current
4/11/01; v.0.9
AS4C4M4F0
AS4C4M4F0-50
AS4C4M4F1-50
50
25
12
13
85
25
135
1.0
AS4C4M4F0-60
AS4C4M4F1-60
60
30
15
15
100
30
120
1.0
Unit
ns
ns
ns
ns
ns
ns
mA
mA
P. 1 of 18
t
RAC
t
CAA
t
CAC
t
OEA
t
RC
t
PC
I
CC1
I
CC5
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