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AS4LC256K16EO-60TC 参数 Datasheet PDF下载

AS4LC256K16EO-60TC图片预览
型号: AS4LC256K16EO-60TC
PDF下载: 下载PDF文件 查看货源
内容描述: 3.3V 256K ×16的CMOS DRAM( EDO ) [3.3V 256K X 16 CMOS DRAM (EDO)]
分类和应用: 动态存储器
文件页数/大小: 25 页 / 526 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS4LC256K16EO
®
Absolute maximum ratings
Parameter
Input voltage
Output voltage
Power supply voltage
Operating temperature
Storage temperature (plastic)
Soldering temperature
×
time
Power dissipation
Short circuit output current
Latch-up current
Symbol
V
in
V
out
V
CC
T
OPR
T
STG
T
SOLDER
P
D
I
out
Min
-1.0
-1.0
-1.0
0
-55
200
Max
+7.0
+7.0
+7.0
+70
+150
260
×
10
1
50
Unit
V
V
V
°C
°C
o
C
×
sec
W
mA
mA
NOTE:
Stresses greater than those listed under
Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to abso-
lute maximum rating conditions for extended periods may affect reliability.
DC electrical characteristics
-35
Parameter
Input leakage
current
Output leakage
current
Operating power
supply current
Symbol
I
IL
I
OL
I
CC1
Test conditions
0V
V
in
+5.5V
pins not under test = 0V
D
OUT
disabled,
0V
V
out
+5.5V
RAS, UCAS, LCAS, address cycling;
t
RC
=min
RAS = UCAS = LCAS = V
IH
RAS cycling,
UCAS = LCAS = V
IH
,
t
RC
= min
RAS=UCAS=LCAS=V
IL
,
address cycling: t
SC
= min
RAS=UCAS=LCAS= V
CC
- 0.2V
RAS, UCAS, LCAS, cycling;
t
RC
= min
I
OUT
= -2 mA
I
OUT
= 2 mA
RAS = UCAS = LCAS=V
IL
,
WE = OE = A0-A8 = V
CC
-0.2V,
DQ0-DQ15 = V
CC
-0.2V,
0.2V are open
Min
-10
-10
Max
10
10
70
200
-45
Min
-10
-10
Max
10
10
60
200
-60
Min
-10
-10
Max Unit
10
10
50
µA
µA
mA
1,2
Note
TTL standby power
I
CC2
supply current
Average power
supply current, RAS I
CC3
refresh mode
EDO page mode
average power
supply current
CMOS standby
power supply
current
CAS-before-RAS
refresh power
supply current
Output Voltage
I
CC4
200
µA
40
mA
1
50
45
40
35
35
mA
1,2
I
CC5
400
400
400
µA
I
CC6
V
OH
V
OL
I
CC7
2.4
50
0.4
2.4
50
0.4
2.4
50
0.4
mA
V
V
1
Self refresh current
-
400
-
400
-
400
µA
4/11/01; V.1.1
Alliance Semiconductor
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