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AS7C1026B-10JC 参数 Datasheet PDF下载

AS7C1026B-10JC图片预览
型号: AS7C1026B-10JC
PDF下载: 下载PDF文件 查看货源
内容描述: 5 V 64K ×16的CMOS SRAM [5 V 64K X 16 CMOS SRAM]
分类和应用: 静态存储器
文件页数/大小: 10 页 / 123 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS7C1026B
®
AC test conditions
Output load: see Figure B.
Input pulse level: GND to 3.5 V. See Figure A.
Input rise and fall times: 2 ns. See Figure A.
Input and output timing reference levels: 1.5
+5 V
480
+3.5V
GND
D
OUT
90%
10%
2 ns
90%
10%
255
C
13
Thevenin Equivalent:
168
D
OUT
+1.728 V
Figure A: Input pulse
GND
Figure B: 5 V Output load
Notes
1
2
3
4
5
6
7
8
9
10
11
12
13
During V
CC
power-up, a pull-up resistor to V
CC
on CE is required to meet I
SB
specification.
This parameter is sampled, but not 100% tested.
For test conditions, see
AC Test Conditions,
Figures A and B.
These parameters are specified with C
L
= 5 pF, as in Figures B. Transition is measured ± 500 mV from steady-state voltage.
This parameter is guaranteed, but not tested.
WE is high for read cycle.
CE and OE are low for read cycle.
Address is valid prior to or coincident with CE transition low.
All read cycle timings are referenced from the last valid address to the first transitioning address.
N/A.
All write cycle timings are referenced from the last valid address to the first transitioning address.
Not applicable.
C = 30 pF, except all high Z and low Z parameters where C = 5 pF.
3/26/04, v 1.3
Alliance Semiconductor
P. 7 of 10