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AS7C1026B-20TI 参数 Datasheet PDF下载

AS7C1026B-20TI图片预览
型号: AS7C1026B-20TI
PDF下载: 下载PDF文件 查看货源
内容描述: 5 V 64K ×16的CMOS SRAM [5 V 64K X 16 CMOS SRAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 10 页 / 123 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS7C1026B  
®
AC test conditions  
– Output load: see Figure B.  
– Input pulse level: GND to 3.5 V. See Figure A.  
– Input rise and fall times: 2 ns. See Figure A.  
– Input and output timing reference levels: 1.5  
+5 V  
480  
Thevenin Equivalent:  
168  
D
OUT  
+3.5V  
GND  
13  
D
+1.728 V  
90%  
10%  
90%  
10%  
OUT  
255  
C
2 ns  
Figure A: Input pulse  
GND  
Figure B: 5 V Output load  
Notes  
1
2
3
4
5
6
7
8
9
During VCC power-up, a pull-up resistor to VCC on CE is required to meet ISB specification.  
This parameter is sampled, but not 100% tested.  
For test conditions, see AC Test Conditions, Figures A and B.  
These parameters are specified with CL = 5 pF, as in Figures B. Transition is measured ± 500 mV from steady-state voltage.  
This parameter is guaranteed, but not tested.  
WE is high for read cycle.  
CE and OE are low for read cycle.  
Address is valid prior to or coincident with CE transition low.  
All read cycle timings are referenced from the last valid address to the first transitioning address.  
10 N/A.  
11 All write cycle timings are referenced from the last valid address to the first transitioning address.  
12 Not applicable.  
13 C = 30 pF, except all high Z and low Z parameters where C = 5 pF.  
3/26/04, v 1.3  
Alliance Semiconductor  
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