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AS7C32098A-12TIN 参数 Datasheet PDF下载

AS7C32098A-12TIN图片预览
型号: AS7C32098A-12TIN
PDF下载: 下载PDF文件 查看货源
内容描述: 3.3 V 128K ×16的CMOS SRAM [3.3 V 128K x 16 CMOS SRAM]
分类和应用: 存储内存集成电路静态存储器光电二极管ISM频段
文件页数/大小: 10 页 / 199 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS7C32098A  
®
Write waveform 3 9  
tWC  
tAH  
tWR  
Address  
CE  
tAS  
tCW  
tAW  
tBW  
LB, UB  
WE  
tWP  
tDW  
Data valid  
tDH  
DataIN  
tWZ  
Data undefined  
DataOUT  
High Z  
High Z  
AC test conditions  
- Output load: see Figure B.  
- Input pulse level: GND to 3.0V. See Figure A.  
- Input rise and fall times: 2 ns. See Figure A.  
- Input and output timing reference levels: 1.5V.  
+3.3V  
320  
+3.0V  
DOUT  
350  
168  
90%  
10%  
90%  
10%  
Thevenin equivalent:  
+1.728V  
DOUT  
C10  
GND  
2 ns  
GND  
Figure B: 3.3V Output load  
Figure A: Input pulse  
Notes  
1
2
3
4
5
6
7
8
9
During VCC power-up, a pull-up resistor to VCC on CE is required to meet ISB specification.  
For test conditions, see AC Test Conditions, Figures A and B.  
t
CLZ and tCHZ are specified with CL = 5pF as in Figure B. Transition is measured ±500mV from steady-state voltage.  
This parameter is guaranteed, but not tested.  
WE is High for read cycle.  
CE and OE are Low for read cycle.  
Address valid prior to or coincident with CE transition Low.  
All read cycle timings are referenced from the last valid address to the first transitioning address.  
All write cycle timings are referenced from the last valid address to the first transitioning address.  
10 C=30pF, except on High Z and Low Z parameters, where C=5pF.  
2/24/05,v. 1.0  
Alliance Semiconductor  
P. 7 of 10