欢迎访问ic37.com |
会员登录 免费注册
发布采购

AS7C3513B-15JI 参数 Datasheet PDF下载

AS7C3513B-15JI图片预览
型号: AS7C3513B-15JI
PDF下载: 下载PDF文件 查看货源
内容描述: 3.3V 32K ×16的CMOS SRAM [3.3V 32K x 16 CMOS SRAM]
分类和应用: 静态存储器
文件页数/大小: 10 页 / 218 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
 浏览型号AS7C3513B-15JI的Datasheet PDF文件第2页浏览型号AS7C3513B-15JI的Datasheet PDF文件第3页浏览型号AS7C3513B-15JI的Datasheet PDF文件第4页浏览型号AS7C3513B-15JI的Datasheet PDF文件第5页浏览型号AS7C3513B-15JI的Datasheet PDF文件第6页浏览型号AS7C3513B-15JI的Datasheet PDF文件第8页浏览型号AS7C3513B-15JI的Datasheet PDF文件第9页浏览型号AS7C3513B-15JI的Datasheet PDF文件第10页  
AS7C3513B
®
AC test conditions
-
-
-
-
Output load: see Figure B.
Input pulse level: GND to 3.0V. See Figure A.
Input rise and fall times: 2 ns. See Figure A.
Input and output timing reference levels: 1.5V.
Thevenin equivalent:
168
D
out
+1.728V
+3.3V
320
+3.0V
GND
90%
10%
2 ns
90%
10%
D
out
350
C
13
Figure A: Input pulse
GND
Figure B: 3.3V Output load
Notes
1
2
3
4
5
6
7
8
9
10
11
12
13
During V
CC
power-up, a pull-up resistor to V
CC
on CE is required to meet I
SB
specification.
This parameter is sampled, but not 100% tested.
For test conditions, see
AC Test Conditions,
Figures A and B.
These parameters are specified with C
L
= 5pF, as in Figure B. Transition is measured
±500mV
from steady-state voltage.
This parameter is guaranteed, but not 100% tested.
WE is High for read cycle.
CE and OE are Low for read cycle.
Address valid prior to or coincident with CE transition Low.
All read cycle timings are referenced from the last valid address to the first transitioning address.
Not applicable.
All write cycle timings are referenced from the last valid address to the first transitioning address.
Not applicable.
C=30pF, except on High Z and Low Z parameters, where C=5pF.
3/24/04, v.1.2
Alliance Semiconductor
P. 7 of 10